4.5.3 EEPROM Cell Performance Characteristics
Operation | Test Condition | Min. | Max. | Units |
---|---|---|---|---|
Write Endurance(1) | TA = 25°C, VCC(min.) <
VCC < VCC(max.), Byte(2) or Page Write mode | 1,000,000 | — | Write Cycles |
Data Retention(1) | TA = 55°C | 100 | — | Years |
Note:
- Performance is determined through characterization and the qualification process.
- Due to the memory array architecture, the Write Cycle Endurance is specified for writes in groups of four data bytes. The beginning of any 4-byte boundaries can be determined by multiplying any integer (N) by four (i.e., 4*N). The end address can be found by adding three to the beginning value (i.e., 4*N+3). See Internal Writing Methodology for more details on this implementation.