4.5.3 EEPROM Cell Performance Characteristics

Table 4-6. EEPROM Cell Performance Characteristics
OperationTest ConditionMin.Max.Units
Write Endurance(1)TA = 25°C, VCC(min.) < VCC < VCC(max.),

Byte(2) or Page Write mode

1,000,000Write Cycles
Data Retention(1)TA = 55°C100Years
Note:
  1. Performance is determined through characterization and the qualification process.
  2. Due to the memory array architecture, the Write Cycle Endurance is specified for writes in groups of four data bytes. The beginning of any 4-byte boundaries can be determined by multiplying any integer (N) by four (i.e., 4*N). The end address can be found by adding three to the beginning value (i.e., 4*N+3). See Internal Writing Methodology for more details on this implementation.