Programming the EEPROM

The EEPROM is organized in pages, refer to table, No. of Words in a Page and No. of Pages in the EEPROM, in the Page Size section. When programming the EEPROM, the program data is latched into a page buffer. This allows one page of data to be programmed simultaneously. The programming algorithm for the EEPROM data memory is as follows (for details on Command, Address, and Data loading, refer to Programming the Flash):

1. 1.Step A: Load Command “0001 0001”.
2. 2.Step G: Load Address High Byte (0x00 - 0xFF).
3. 3.Step B: Load Address Low Byte (0x00 - 0xFF).
4. 4.Step C: Load Data (0x00 - 0xFF).
5. 5.Step E: Latch data (give PAGEL a positive pulse).
6. 6.Step K: Repeat 3 through 5 until the entire buffer is filled.
7. 7.Step L: Program EEPROM page.
   1. 7.1.Set BS1 to “0”.
   2. 7.2.Give WR a negative pulse. This starts programming of the EEPROM page. RDY/BSY goes low.
   3. 7.3.Wait until to RDY/BSY goes high before programming the next page (refer to the following figure for signal waveforms).