DC Characteristics

The following characteristics are applicable to the operating temperature range: TA [-40°C : +105°C], unless otherwise specified.

Table 1. DC Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
VDDCORE DC Supply Core – 1.20 – 1.32 V
Allowable Voltage Ripple rms value 10 kHz to 20 MHz – – 20 mV
Rising Slope (2) – 1.20 – 30 V/ms
VDDIO DC Supply I/Os, Backup (See Note 1) 3.0 3.3 3.6 V
Allowable Voltage Ripple rms value 10 kHz to 10 MHz – – 30 mV
Rising Slope – 6.5 – 30 V/ms
VDDIN DC Supply Voltage Regulator (See Note 1) 3.0 3.3 3.6 V
Allowable Voltage Ripple rms value 10 kHz to 20 MHz – – 20 mv
VDDPLL PLL A and Main Oscillator Supply – 1.20 – 1.32 V
Allowable Voltage Ripple rms value 10 kHz to 10 MHz – – 20 mV
rms value > 10 MHz – – 10
VDDUTMIC DC Supply UDPHS and UHPHS UTMI+ Core – 1.20 – 1.32 V
Allowable Voltage Ripple rms value 10 kHz to 10 MHz – – 10 mV
VDDUTMII DC Supply UDPHS and UHPHS UTMI+ Interface – 3.0 3.3 3.6 V
Allowable Voltage Ripple rms value 10 kHz to 10 MHz – – 20 mV
VDDPLLUSB DC Supply UTMI PLL – 3.0 3.3 3.6 V
Allowable Voltage Ripple rms value 10 kHz to 10 MHz – – 10 mV
Notes:
  1. 1.VDDIO voltage must be equal to VDDIN voltage.
  2. 2.Refer to section 7.2.1 Powerup.
Table 2. DC Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
VIL Low-level Input Voltage GPIO_MLB -0.3 – 0.7 V
GPIO_AD, GPIO_CLK -0.3 – 0.8
GPIO, CLOCK, RST, TEST -0.3 – VDDIO x 0.3
VIH High-level Input Voltage GPIO_MLB 1.80 – VDDIO + 0.3 V
GPIO_AD, GPIO_CLK 2 VDDIO + 0.3
GPIO, CLOCK, RST, TEST VDDIO x 0.7 – VDDIO + 0.3
VOH High-level Output Voltage GPIO_MLB, IOH = 6 mA 2 – – V
GPIO_AD, GPIO, RST, TEST, CLOCK , IOH = 4 mA, Low drive VDDIO - 0.4 – –
GPIO_AD, GPIO, RST, TEST, CLOCK , IOH = 10 mA,High drive VDDIO - 0.4 – –
GPIO_CLK, IOH = 6 mA, Low drive VDDIO - 0.4
GPIO_CLK,IOH = 12 mA, High drive VDDIO - 0.4 – –
VOL Low-level Output Voltage GPIO_MLB, IOL = -6 mA – – 0.4 V
GPIO_AD, GPIO, RST, TEST, CLOCK, IOL = -4 mA, Low drive – – 0.4
GPIO_AD, GPIO, RST, TEST, CLOCK, IOL = -10 mA,High drive – – 0.4
GPIO_CLK, IOL = -6 mA, Low drive – – 0.4
GPIO_CLK, IOL = -12 mA, High drive – – 0.4
Vhys Hysteresis Voltage GPIO with Hysteresis mode enabled 150 – – mV
IIL Low-level Input Current Pullup OFF -1 – 1 µA
Pullup ON 10 – 55
IIH High-level Input Current Pulldown OFF -1 – 1 µA
Pulldown ON 10 – 55
RSERIAL Serial Resistor GPIO_MLB – 9 – Ohm
GPIO_AD, GPIO_CLK – 14 –
GPIO, CLOCK, RST, TEST – 26 –
Table 3. Voltage Regulator Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
VDDOUT DC Output Voltage Normal mode, ILOAD = 100 mA 1.2 1.23 1.26 V
Standby mode – 0 –
ILOAD Maximum DC Output Current – – 150 mA
CDIN Input Decoupling Capacitor (1) – 4.7 – µF
CDOUT Output Decoupling Capacitor (2) – 1 – µF
ESR – – 2 Ohm
tON Turn-on Time CDOUT = 1 µF, VDDOUT reaches DC output voltage – 1 2.5 ms
Notes:
  1. 1.A 4.7 μF (±20%) or higher ceramic capacitor must be connected between VDDIN and the closest GND pin of the device. This large decoupling capacitor is mandatory to reduce startup current, improving transient response and noise rejection.
  2. 2.To ensure stability, an external 1 μF (±20%) output capacitor, CDOUT, must be connected between VDDOUT and the closest GND pin of the device. Solid tantalum and multilayer ceramic capacitors are suitable as output capacitors. A 100 nF bypass capacitor between VDDOUT and the closest GND pin of the device helps decrease output noise and improves the load transient response.
Table 4. Core Power Supply Brownout Detector Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
VT- Supply Falling Threshold (see Note 1) – 0.97 1.0 1.04 V
Vhys Hysteresis Voltage – – 25 50 mV
tSTART Startup Time From disabled state to enabled state – – 400 µs
Note:
  1. 1.The Brownout Detector is configured using the BODDIS bit in the SUPC_MR register.
Figure 1. Core Brownout Output Waveform
Table 5. VDDCORE Power-on Reset Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
VT+ Threshold Voltage Rising – 0.79 0.95 1.07 V
VT- Threshold Voltage Falling – 0.66 0.89 – V
Vhys Hysteresis Voltage – 10 60 115 mV
tRES Reset Timeout Period – 240 350 800 µs
Figure 2. VDDCORE Power-On Reset Characteristics
Table 6. VDDIO Supply Monitor
Symbol Parameter Conditions Min. Typ. Max. Unit
VT Supply Monitor Threshold 16 selectable steps (see the Threshold Selection table below) – – – V
TACC Threshold Accuracy – -4 – 4 %
Vhys Hysteresis Voltage – – 38 45 mV
tSTART Startup Time From disabled state to enabled state – – 300 µs
Notes:
  1. 1.It is recommended to enable the Supply Monitor (see Table 58-9 Threshold selection).
  2. 2.The Supply Monitor operates down to 1.7V.
  3. 3.Once the Supply Monitor threshold is reached, it takes <200 µs to generate the internal reset of the device. The internal reset will remain active all the way until the POR becomes active.
  4. 4.The 200 us reset time parameter is for design guidance only, and is not tested in manufacturing.
Table 7. Threshold Selection
Symbol Parameter Digital Code Min. Typ. Max. Unit
VT Supply Monitor Threshold 0 – 1.6 – V
1 – 1.72 –
10 – 1.84 –
11 – 1.96 –
100 – 2.08 –
101 – 2.2 –
110 – 2.32 –
111 – 2.44 –
1000 – 2.56 –
1001 – 2.68 –
1010 – 2.8 –
1011 – 2.92 –
1100 – 3.04 –
1101 – 3.16 –
1110 – 3.28 –
1111 – 3.4 –
Figure 3. VDDIO Supply Monitor
Table 8. VDDIO Power-On Reset Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
VT+ Threshold Voltage Rising – 1.45 1.53 1.61 V
VT- Threshold Voltage Falling – 1.37 1.46 – V
Vhys Hysteresis – 40 80 130 mV
tRES Reset Time-out Period – 240 320 800 µs
Figure 4. VDDIO Power-On Reset Characteristics
Parent topic: Electrical Characteristics for SAM V70/V71