ERASE Line Assertion Time |
– |
230 |
– |
– |
ms |
Program Cycle Time |
Write Page |
– |
1.5 |
– |
ms |
Erase Page |
– |
10 |
50 |
ms |
Erase Small Sector (8
Kbytes) |
– |
80 |
200 |
ms |
Erase Larger Sector (112 or 128
Kbytes) |
|
800 |
1500 |
ms |
Full Chip Erase |
512 Kbytes |
– |
3 |
6 |
s |
1 Mbytes |
– |
6 |
12 |
s |
2 Mbytes (only
for SAMV71) |
– |
13 |
24 |
s |
Data Retention |
At TA = 85°C, after 10K
cycles (see Note 1) |
10 |
– |
– |
Years |
At TA = 85°C, after 1K
cycles (see Note 1) |
20 |
– |
– |
Years |
At TA = 105°C, after 1K
cycles (see Note 1) |
5.5 |
– |
– |
Years |
Endurance |
Write/Erase cycles per page,
block or sector at 25°C |
100K |
|
|
Cycles |
Write/Erase cycles per page,
block or sector at 105°C |
10K |
– |
– |
Cycles |
Flash Active Current |
Random 128-bit read at maximum frequency at 25°C |
on VDDCORE =1.2V |
– |
16 |
20 |
mA |
on VDDIO |
– |
2 |
10 |
Program at 25°C |
on VDDCORE =1.2V |
– |
2 |
3 |
on VDDIO |
– |
8 |
12 |
Erase at 25°C |
on VDDCORE =1.2V |
– |
2 |
2 |
on VDDIO |
– |
8 |
12 |