Table 1. Maximum Operating
Frequency
VDD range |
NVM Wait States |
Maximum Operating Frequency |
Units |
2.7V to 3.63V |
0 |
20 |
MHz |
1 |
32 |
Note: On this Flash technology, a maximum
number of 8 consecutive write is allowed per row. Once this number is reached, a row
erase is mandatory.
Table 2. Flash Endurance and Data
Retention
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Units |
RetNVM25k |
Retention after up to 25k cycles |
Average ambient 55°C |
10 |
50 |
- |
Years |
RetNVM2.5k |
Retention after up to 2.5k cycles |
Average ambient 55°C |
20 |
100 |
- |
Years |
RetNVM100 |
Retention after up to 100 cycles |
Average ambient 55°C |
25 |
>100 |
- |
Years |
CycNVM |
Cycling Endurance(1) |
-40°C < Ta <
125°C |
25k |
- |
- |
Cycles |
Note:
- 1.An endurance cycle is a write and an erase operation.
Table 3. EEPROM Emulation(1) Endurance and Data Retention
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Units |
RetEEPROM100k |
Retention after up to 100k cycles |
Average ambient 55°C |
10 |
50 |
- |
Years |
RetEEPROM10k |
Retention after up to 10k cycles |
Average ambient 55°C |
20 |
100 |
- |
Years |
CycEEPROM |
Cycling Endurance(2) |
-40°C < Ta <
125°C |
100k |
- |
- |
Cycles |
Notes:
- 1.The EEPROM Emulation is a
software emulation as described in the Application Note “AT03265”.
- 2.An endurance cycle is a write and an erase operation.
Table 4. NVM Characteristics
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Units |
tFPP |
Page programming time |
- |
- |
- |
2.5 |
ms |
tFRE |
Row erase time |
- |
- |
- |
6 |
ms |
tFCE |
DSU chip erase time (CHIP_ERASE) |
- |
- |
- |
240 |
ms |