MEMTYPE_APPL_FLASH, MEMTYPE_BOOT_FLASH,
MEMTYPE_FLASH_PAGE |
RW |
R |
-
Used to read/write FLASH in programming or
debugging mode
-
Address is from base 0x000000, provided that
PROG_BASE is configured correctly (Device Context: AVR devices with UPDI)
-
Any number of aligned words can be
accessed.
|
MEMTYPE_APPL_FLASH_ATOMIC,
MEMTYPE_BOOT_FLASH_ATOMIC |
W |
- |
-
Used to write a full FLASH page in the application section in programming mode
-
The page is automatically erased before writing
-
Address is from base 0x000000, provided that
PROG_BASE is configured correctly (Device Context: AVR devices with UPDI)
-
Writes are restricted to full pages only
|
MEMTYPE_EEPROM, MEMTYPE_EEPROM_PAGE,
MEMTYPE_EEPROM_ATOMIC |
RW |
RW |
-
Used to write EEPROM in programming or
debugging mode
-
The page is automatically erased before
writing if the ATOMIC memtype is used.
-
Absolute EEPROM address must be provided
-
Any number of bytes can be accessed
|
MEMTYPE_FUSES |
RW |
- |
|
MEMTYPE_LOCK_BITS |
RW |
R |
-
Used to read/write LOCKBITS in programming or
debugging mode
-
Absolute lockbit address must be
provided
-
Only a single bytes can be accessed
|
MEMTYPE_SIGNATURE,
MEMTYPE_CALIBRATION_SIGNATURE |
R |
R |
|
MEMTYPE_USER_SIGNATURE |
RW |
RW |
-
Used to read/write the USER SIGNATURE in programming or debugging mode
-
Absolute signature address must be
provided
-
Any number of bytes can be accessed
- When writing user signature on a locked device, a full page write is
required.
|
MEMTYPE_REGFILE |
- |
RW |
-
Used to read/write the general purpose registers in debugging mode
-
Address is from base 0x00
-
Any number of bytes can be accessed
|
MEMTYPE_SRAM |
- |
RW |
|