The following table describes the characteristics for the oscillator when a digital clock
is applied on XIN.

Symbol | Parameter | Min. | Typ. | Max. | Units |
---|---|---|---|---|---|

F_{XIN} |
XIN clock frequency | - | - | 24 | MHz |

DC_{XIN}^{(1)} |
XIN clock duty cycle | 40 | 50 | 60 | % |

Note:

- 1.These values are based on simulation. They are not covered by production test limits or characterization.

The following Table describes the characteristics for the oscillator when a crystal is connected between XIN and XOUT.

Figure 1. Oscillator Connection

The user must choose a crystal oscillator where the
crystal load capacitance C_{L} is within the range given in the Table. The exact
value of C_{L} can be found in the crystal data sheet. The capacitance of the
external capacitors (C_{LEXT}) can then be computed as follows:

C_{LEXT} = 2(C_{L} - C_{PARA} - C_{PCB} -
C_{SHUNT})

Where:

- C
_{PARA}is the internal load capacitor parasitic between XIN and XOUT (C_{PARA}= (C_{XIN}* C_{XOUT})/(C_{XIN}+ C_{XOUT})) - C
_{PCB}is the capacitance of the PCB - C
_{SHUNT}is the shunt capacity of the crystal.

Symbol | Parameter | Conditions | Min. | Typ. | Max | Units |
---|---|---|---|---|---|---|

Fout | Crystal oscillator frequency | 0.4 | - | 32 | MHz | |

ESR^{(2)} |
Crystal Equivalent Series Resistance - SF = 3 | F = 0,4MHz - CL=100 pF XOSC,GAIN=0 | - | - | 5.6K | Ω |

F = 2MHz - CL=20 pF XOSC,GAIN=0, Cshunt=3.3pF | - | - | 330 | |||

F = 4MHz - CL=20 pF XOSC,GAIN=1, Cshunt=2.5pF | - | - | 240 | |||

F = 8MHz - CL=20 pF XOSC,GAIN=2, Cshunt=5.5pF | - | - | 105 | |||

F = 16MHz - CL=20 pF XOSC,GAIN=3, Cshunt=4pF | - | - | 60 | |||

F = 32MHz - CL=20 pF XOSC,GAIN=4, Cshunt=3.9pF | - | - | 55 | |||

Cxin^{(2)} |
Parasitic load capacitor | - | 6.7 | - | pF | |

Cxout^{(2)} |
- | 4.2 | - | pF | ||

Tstart^{(2)} |
Startup time | F = 2MHz - CL=20 pF XOSC,GAIN=0, Cshunt=3.3pF | - | 15.6K | 81.6K | Cycles |

F = 4MHz - CL=20 pF XOSC,GAIN=1, Cshunt=2.5pF | - | 6.3K | 25.2K | |||

F = 8MHz - CL=20 pF XOSC,GAIN=2, Cshunt=5.5pF | - | 6.2K | 27.2K | |||

F = 16MHz - CL=20 pF XOSC,GAIN=3, Cshunt=4pF | - | 7.7K | 27.3K | |||

F = 32MHz - CL=20 pF XOSC,GAIN=4, Cshunt=3.9pF | - | 6.0K | 21K | |||

CL^{(1)} |
Crystal load capacitance | 10 | - | 20 | pF | |

Pon^{(1)} |
Drive Level | AMPGC=ON | - | - | 100 | uW |

Notes:

- 1.These values are based on simulation. They are not covered by production test limits or characterization.
- 2.These values are based on characterization. They are not covered in test limits in production.

Symbol | Parameter | Conditions | Ta | Min. | Typ. | Max. | Units | |
---|---|---|---|---|---|---|---|---|

I_{DD} |
Current consumption | F=2MHz - CL=20pF XOSC,GAIN=0, VCC=3.3V | AMPGC=OFF | Max 85°C Typ 25°C |
- | 66 | 85 | µA |

AMPGC=ON | - | 62 | 99 | |||||

F=4MHz - CL=20pF XOSC,GAIN=1, VCC=3.3V | AMPGC=OFF | - | 107 | 140 | ||||

AMPGC=ON | - | 70 | 101 | |||||

F=8MHz - CL=20pF XOSC,GAIN=2, VCC=3.3V | AMPGC=OFF | - | 200 | 261 | ||||

AMPGC=ON | - | 118 | 153 | |||||

F=16MHz - CL=20pF XOSC,GAIN=3, VCC=3.3V | AMPGC=OFF | - | 436 | 581 | ||||

AMPGC=ON | - | 247 | 329 | |||||

F=32MHz - CL=20pF XOSC,GAIN=4, VCC=3.3V | AMPGC=OFF | - | 1303 | 1902 | ||||

AMPGC=ON | - | 627 | 940 |

Note:

- 1.These values are based on characterization. They are not covered in test limits in production.