Memory Programming Specifications

Table 1.
Standard Operating Conditions (unless otherwise stated)
Param
 No. Sym. Device Characteristics Min. Typ† Max. Units Conditions
Data EEPROM Memory Specifications
MEM20 ED DataEE Byte Endurance 100k E/W -40°C ≤ TA ≤ +85°C
MEM21 TD_RET Characteristic Retention 40 Year Provided no other specifications are violated
MEM22 ND_REF Total Erase/Write Cycles before Refresh 1M 4M E/W -40°C ≤ TA ≤ +85°C
MEM23 VD_RW VDD for Read or Erase/Write operation VDDMIN VDDMAX V  
MEM24 TD_BEW Byte Erase and Write Cycle Time 11 ms  
Program Flash Memory Specifications
MEM30 EP Flash Memory Cell Endurance 10k E/W -40°C ≤ TA ≤ +85°C


(Note 1)

MEM32 TP_RET Characteristic Retention 40 Year Provided no other specifications are violated
MEM33 VP_RD VDD for Read operation VDDMIN VDDMAX V  
MEM34 VP_REW VDD for Row Erase or Write operation VDDMIN VDDMAX V  
MEM35 TP_REW Self-Timed Page Write 10 ms  
MEM36 TSE Self-Timed Page Erase 11 ms  
MEM37 TP_WRD Self-Timed Word Write 75 μs  

† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.

Note:
  1. 1.Flash Memory Cell Endurance for the Flash memory is defined as: One Row Erase operation and one Self-Timed Write.