Features
- Fast Read Access Time: 120 ns
- Automatic Page Write Operation:
- Internally organized as 131,072 x 8 (1 Mbit)
- Internal address and data
latches for 128 bytes
- Internal control timer
- Fast Write Cycle Time:
- Page Write cycle time: 10 ms maximum
- 1 to
128-byte Page Write operation
- Low-Power Dissipation:
- 80 mA active current
- 300 µA CMOS standby current
- Hardware and Software Data
Protection
- DATA Polling for
End of Write Detection
- High Reliability CMOS Technology:
- Endurance: 10,000 or 100,000
cycles
- Data retention: 10 years
- Single 5V ± 10% Supply
- CMOS and TTL Compatible Inputs and
Outputs
- JEDEC® Approved Byte-Wide
Pinout