Device Operation

READ: The AT28C010 is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high-impedance state when either CE or OE is high. This dual-line control gives designers flexibility in preventing bus contention in their system.

BYTE WRITE: A low pulse on the WE or CE input with CE or WE low (respectively) and OE high initiates a write cycle. The address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of CE or WE. Once a byte write is started, it will automatically time itself to completion. Once a programming operation is initiated and for the duration of tWC, a read operation will effectively be a polling operation.

PAGE WRITE: The page write operation of the AT28C010 allows 1 to 128 bytes of data to be written into the device during a single internal programming period. A page write operation is initiated in the same manner as a byte write; the first byte written can then be followed by 1 to 127 additional bytes. Each successive byte must be written within 150 µs (tBLC) of the previous byte. If the tBLC limit is exceeded, the AT28C010 will cease accepting data and commence the internal programming operation. All bytes during a page write operation must reside on the same page as defined by the state of the A7‑A16 inputs. For each WE high‑to‑low transition during the page write operation, A7‑A16 must be the same. The A0 to A6 inputs are used to specify which bytes within the page are to be written. The bytes may be loaded in any order and may be altered within the same load period. Only bytes which are specified for writing will be written; unnecessary cycling of other bytes within the page does not occur.

DATA POLLING: The AT28C010 features DATA Polling to indicate the end of a write cycle. During a byte or page write cycle, an attempted read of the last byte written will result in the complement of the written data to be presented on I/O7. Once the write cycle has been completed, true data is valid on all outputs, and the next write cycle may begin. DATA Polling may begin at anytime during the write cycle.

TOGGLE BIT: In addition to DATA Polling, the AT28C010 provides another method for determining the end of a write cycle. During the write operation, successive attempts to read data from the device will result in I/O6 toggling between one and zero. Once the write has completed, I/O6 will stop toggling and valid data will be read. Reading the toggle bit may begin at any time during the write cycle.

DATA PROTECTION: If precautions are not taken, inadvertent writes may occur during transitions of the host system power supply. Microchip incorporated both hardware and software features that will protect the memory against inadvertent writes.

HARDWARE PROTECTION: Hardware features protect against inadvertent writes to the AT28C010 in the following ways:

SOFTWARE DATA PROTECTION: A software-controlled data protection feature has been implemented on the AT28C010. When enabled, the software data protection (SDP) will prevent inadvertent writes. The SDP feature may be enabled or disabled by the user; the AT28C010 is shipped with SDP disabled.

SDP is enabled by the host system issuing a series of three write commands; three specific bytes of data are written to three specific addresses (refer to Software Data Protection Algorithm). After writing the 3‑byte command sequence and after tWC, the entire AT28C010 will be protected against inadvertent write operations. It should be noted that, once protected, the host may still perform a byte or page write to the AT28C010. This is done by preceding the data to be written by the same 3‑byte command sequence used to enable SDP.

Once set, SDP will remain active unless the disable command sequence is issued. Power transitions do not disable SDP and SDP will protect the AT28C010 during power‑up and power‑down conditions. All command sequences must conform to the page write timing specifications. The data in the enable and disable command sequences is not written to the device and the memory addresses used in the sequence may be written with data in either a byte or page write operation.

After setting SDP, any attempt to write to the device without the 3‑byte command sequence will start the internal write timers. No data will be written to the device; however, for the duration of tWC, read operations will effectively be polling operations.

DEVICE IDENTIFICATION: An extra 128 bytes of EEPROM memory are available to the user for device identification. By raising A9 to 12V ± 0.5V and using address locations 1FF80H to 1FFFFH, the bytes may be written to or read from in the same manner as the regular memory array.

OPTIONAL CHIP ERASE MODE: The entire device can be erased using a 6‑byte software code. See Software Chip Erase application note for details.