A clarification has been made to change the Flash endurance specification in the
Memories bullet point in the Features list.
- Memories
- 128 KB in-system
self-programmable Flash memory
- 512B EEPROM
- 16 KB SRAM
- 32B of user row in nonvolatile memory that can keep data during chip-erase
and be programmed while the device is locked
- Write/erase endurance
- Flash: 1,000
cycles
- EEPROM: 100,000 cycles
- Data retention: 40 years at
55°C