Memory Programming Specifications

Table 1.
Standard Operating Conditions (unless otherwise stated)
Param
 No. Sym. Device Characteristics Min. Typ† Max. Units Conditions
High Voltage Entry Programming Mode Specifications
MEM01 VIHH Voltage on MCLR/VPP pin to enter Programming mode 7.9 — 9 V (Note 2)
MEM02 IPPGM Current on MCLR/VPP pin during Programming mode — 1 — mA (Note 2)
Programming Mode Specifications
MEM10 VBE VDD for Bulk Erase — 2.7 — V (Note 3)
MEM11 IDDPGM Supply Current during Programming operation — — 10 mA  
Program Flash Memory Specifications
MEM30 EP Flash Memory Cell Endurance 10k — — E/W -40°C ≤ TA ≤ +85°C


(Note 1)
MEM32 TP_RET Characteristic Retention — 40 — Year Provided no other specifications are violated
MEM33 VP_RD VDD for Read operation VDDMIN — VDDMAX V  
MEM34 VP_REW VDD for Row Erase or Write operation VDDMIN — VDDMAX V  
MEM35 TP_REW Self-Timed Row Erase or Self-Timed Write — 3.0 — ms  

† - Data in ‘Typ’ column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.

Notes:
  1. 1.Flash Memory Cell Endurance for the Flash memory is defined as: One Row Erase operation and one Self-Timed Write.
  2. 2.Required only if the LVP bit of the Configuration Words is disabled.
  3. 3.Refer to the Family Programming Specification for more information.
Parent topic: DC Characteristics