Features
- Fast Read Access Time: 200 ns
- Automatic Page Write Operation:
- Internally organized as 131,072 x 8 (1M)
- Internal address and data
latches for 128
bytes
- Internal control timer
- Fast Write Cycle Time:
- Page Write cycle time: 10 ms maximum
- 1 to
128-byte Page Write operation
- Low-Power Dissipation:
- 15 mA active current
- 50 µA CMOS standby current
- Hardware and Software Data
Protection
- DATA Polling for
End of Write Detection
- High Reliability CMOS Technology:
- Endurance: 100,000 cycles
- Data retention: 10 years
- Single 3.3V ± 10% Supply
- JEDEC® Approved Byte-Wide
Pinout
- Industrial Temperature Range
- Green (Pb/Halide-free) Packaging
Option