For DDR4, the Controller tab includes the following additional settings under Efficiency.
This selection will map the LSBs of an address to the BG0 field of the memory. This results in alternating Bank Groups during a burst operation based on the tCCD_S timing parameter (see memory device datasheet for tCCD_S settings). The tCCD_S parameter is the timing parameter which results in a better efficient operation for the DDR IP Configurator in the DDR4 mode.
This should be set to the number of banks in a Bank Group of the DDR4 memory device being used. Selecting a higher value is more challenging in terms if timing closure on the controller. A setting of 8 works for all but the most congested designs. A setting of 16 works for designs that have 15% timing margin or more.