51.31 Non-Volatile Memory Controller (NVM) Electrical Specifications

Table 51-44. Flash NVM AC Electrical Specifications
AC CHARACTERISTICSStandard Operating Conditions: VDDREG=VDDIO=AVDD 1.71V to 3.63V (unless otherwise stated)

Operating temperature:

-40°C ≤ TA ≤ +85°C for Industrial

Param. No.SymbolCharacteristicsMin.Typ.Max.UnitsConditions
NVM_1FRETENFlash Data Retention20YrsUnder all conditions less than Absolute Maximum Ratings specifications
NVM_3EP (3)Cell Endurance (Flash Erase and Write Operation)10kCycles
NVM_5FREAD (1)Flash Read0 Wait States20MHzFCR.CTRLA.AUTOWS = 0,

FCR.CTRLA.ADRWS = 0 (2)

1 Wait States40
2 Wait States60
3 Wait States80FCR.CTRLA.AUTOWS = 0,

FCR.CTRLA.ADRWS = 1 (2)

4 Wait States100
5 Wait States120 (4)
NVM_7TFWProgram Cycle Time Write Double Word20µsUnder all conditions less than Absolute Maximum Ratings specifications
NVM_8TFPPPre-Program Double Word3.5µs
NVM_9TCEErase Chip20ms
NVM_11TFEPErase Page20ms
NVM_13IDDPROGSupply Current during ProgrammingPAI_401mAVDDIOx = 3.3V
Note:
  1. Maximum Flash operating frequencies are given in the table above, but are limited by the Embedded Flash access time when the processor is fetching code out of it. Theses tables provide the device maximum operating frequency defined by the field FWS of the FCW CTRLA register when automatic wait states (AUTOWS) is disabled. This field defines the number of Wait states required to access the Embedded Flash Memory.
  2. When frequency is lower than FCLK_1/2, ADRWS bit of NVMCTRL CTRLA register must be set to 0. When frequency is higher or equal to FCLK_1/2, ADRWS bit of NVMCTRL CTRLA register must be set to 1.
  3. Cell Endurance is reached with Flash Pre-Programming option disabled. Enabling such option will improve the Cell Endurance but slow-down the programming time.