51.31 Non-Volatile Memory Controller (NVM) Electrical Specifications
AC CHARACTERISTICS | Standard
Operating Conditions: VDDREG=VDDIO=AVDD 1.71V to 3.63V (unless otherwise
stated) Operating temperature: -40°C ≤ TA ≤ +85°C for Industrial | |||||||
---|---|---|---|---|---|---|---|---|
Param. No. | Symbol | Characteristics | Min. | Typ. | Max. | Units | Conditions | |
NVM_1 | FRETEN | Flash Data Retention | 20 | — | — | Yrs | Under all conditions less than Absolute Maximum Ratings specifications | |
NVM_3 | EP (3) | Cell Endurance (Flash Erase and Write Operation) | 10k | — | — | Cycles | ||
NVM_5 | FREAD (1) | Flash Read | 0 Wait States | — | — | 20 | MHz | FCR.CTRLA.AUTOWS = 0, FCR.CTRLA.ADRWS = 0 (2) |
1 Wait States | — | — | 40 | |||||
2 Wait States | — | — | 60 | |||||
3 Wait States | — | — | 80 | FCR.CTRLA.AUTOWS = 0,
FCR.CTRLA.ADRWS = 1 (2) | ||||
4 Wait States | — | — | 100 | |||||
5 Wait States | — | — | 120 (4) | |||||
NVM_7 | TFW | Program Cycle Time | Write Double Word | — | — | 20 | µs | Under all conditions less than Absolute Maximum Ratings specifications |
NVM_8 | TFPP | Pre-Program Double Word | — | — | 3.5 | µs | ||
NVM_9 | TCE | Erase Chip | — | — | 20 | ms | ||
NVM_11 | TFEP | Erase Page | — | — | 20 | ms | ||
NVM_13 | IDDPROG | Supply Current during Programming | — | — | PAI_401 | mA | VDDIOx = 3.3V | |
Note:
|