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35.2 Embedded Characteristics
Supported Memory Devices:
Low-power DDR1-SDRAM (LPDDR1)
Low-cost LPDDR1 with 2 internal banks
DDR2-SDRAM
Low-Power DDR2-SDRAM-S4
(LPDDR2)
Low-Power DDR3-SDRAM
(LPDDR3)
DDR3-SDRAM (DLL Off mode)
DDR3L-SDRAM (DLL Off mode)
Arbitration Policies: Round-Robin, On Request, Bandwidth
8 System Bus Interfaces;
Management of all Accesses Maximizes Memory Bandwidth and Minimizes Transaction
Latency
Bus Transfer: Dword, Word, Half Word, Byte Access
Supported Configurations:
2K, 4K, 8K, 16K row address memory parts
DDR-SDRAM with two or four internal banks (low-power DDR1-SDRAM)
DDR-SDRAM with four or eight internal banks (DDR2-SDRAM/Low-Power DDR2-SDRAM-S4 /DDR3-SDRAM/DDR3L-SDRAM /Low-power
DDR3-SDRAM )
DDR-SDRAM with 16-bit or
32-bit data
One chip select for SDRAM
device (512-Mbyte address space, 256-Mbyte address space with 16-bit data
path)
Programming Facilities
Multibank ping-pong access (up to four or eight banks opened at the same time = reduced average latency of transactions)
Timing parameters specified by software
Automatic refresh operation, refresh rate is programmable
Automatic update of DS, TCR and PASR parameters (low-power DDR-SDRAM
devices)
Energy-Saving Capabilities
Self-Refresh, Power-Down, Active Power-Down and Deep Power-Down modes
supported
DDR-SDRAM Power-Up Initialization by Software
CAS Latency of 2, 3, 5 or
6 Supported
Reset Function Supported (DDR2-SDRAM)
Clock Frequency Change in Self-Refresh Mode Supported (Low-Power
DDR-SDRAM /DDR3-SDRAM/DDR3L-SDRAM )
Auto-refresh per Bank Supported
(Low-Power DDR2-SDRAM-S4/Low-Power DDR3-SDRAM)
Automatic Adjust Refresh Rate
(Low-Power DDR2-SDRAM-S4/Low-Power DDR3-SDRAM)
Auto-precharge Command Not Used
OCD (Off-chip Driver) Mode, ODT (On-die Termination), Write
leveling are Not Supported
Dynamic Scrambling with User Key (No Impact on Bandwidth)
Bus Monitor
The online versions of the documents are provided as a courtesy. Verify all content and data in the device’s PDF documentation found on the device product page.