43.31 Bluetooth® Low Energy RF Characteristics

Table 43-38. WBZ45 Bluetooth Low Energy RF Characteristics
AC CharacteristicsStandard Operating Conditions: VDDIO = VDDANA 1.9-3.6V (unless otherwise stated)

Operating Temperature: -40°C ≤ TA ≤ +85°C for Industrial Temp

-40°C ≤ TA ≤ +125°C for Extended Temp

Param. No.SymbolCharacteristicsMin.Typ.Max.UnitsConditions
BTG1FREQFrequency range of operation2402—2480MHz—
BTTX1TXPWR:MPABluetooth® transmit power MPA —11.67 —dBm—
BTTX2TXPWR:LPABluetooth transmit power LPA —3.95 —dBm—
BTX3TXIB:1MBPSIn-band emission for FTX ± -2 MHz —-32 —dBm —
In-band emission for FTX ± -(3+N) MHz —-45—dBm —
BTX4TXIB:2MBPSIn-band emission for FTX ± -4 MHz —-43 —dBm —
In-band emission for FTX ± -5 MHz —-48 —dBm —
In-band emission for FTX ± -(6+N) MHz —-51—dBm —
BTRX1RXSENSEReceiver sensitivity at 1 Mbps —-97 —dBm—
Receiver sensitivity at 2 Mbps —-94 —dBm—
Receiver sensitivity at S = 8 —-104 —dBm—
Receiver sensitivity at S = 2 —-101 —dBm—
BTRX2MAXINSIGMaximum input signal level at 1 Mbps —0 —dBm —
Maximum input signal level at 2 Mbps —0 —dBm
Maximum input signal level at S = 2 —0 —dBm
Maximum input signal level at S = 8 —0 —dBm
BTRX3(3)CI1M:COCHC/I Co channel rejection —8 —dB—
CI1M: ± -1MHzC/I adjacent channel rejection —1 —dB—
CI1M: ± -2MHzC/I adjacent channel rejection —-30 —dB—
CI1M:ADJ(3+n)C/I alternate channel rejection —-48 —dB—
CI1M:IMGC/I image frequency rejection —-24 —dB—
CI1M:IMG ± -1 MHzC/I adjacent channel to image freq rejection— -31 —dB—
BTRX4(3)CIS2:COCHC/I Co channel rejection —6— dB—
CIS2: ± -1MHzC/I adjacent channel rejection —-6 —dB—
CIS2: ± -2MHzC/I adjacent channel rejection —-38 —dB—
CIS2:ADJ(3+n)C/I alternate channel rejection —-50 —dB—
CIS2:IMGC/I image frequency rejection —-27 —dB—
CIS2:IMG ± -1 MHzC/I adjacent channel to image freq rejection —-37 —dB—
BTRX5(3)CIS8:COCHC/I Co channel rejection —7 —dB—
CIS8: ± -1 MHzC/I adjacent channel rejection —-7 —dB—
CIS8: ± -2 MHzC/I adjacent channel rejection —-38 —dB—
CIS8:ADJ(3+n)C/I alternate channel rejection —-48 —dB—
CIS8:IMGC/I image frequency rejection —-27 —dB—
CIS2:IMG ± -1MHzC/I adjacent channel to image freq rejection —-41 —dB—
BTRX6(3)CI2M:COCHC/I Co channel rejection —8 —dB—
CI2M: ± -2MHzC/I adjacent channel rejection —1 —dB—
CI2M: ± -4MHzC/I adjacent channel rejection —-29 —dB—
CI2M:ADJ(6+2n)C/I alternate channel rejection —-42 —dB—
CI2M:IMGC/I image frequency rejection —-23 —dB—
CI2M:IMG ± -2MHzC/I adjacent channel to image freq rejection —-28 —dB—
BTRX7(3)BLOCK1M:<2GHZBlocking performance from 30-2 GHz —-10 —dBm—
BLOCK1M:2 GHZ<SIG<2399MHzBlocking performance from 2003-2399 MHz —-21 —dBm—
BLOCK1M:2484 MHZ<SIG<2977MHzBlocking performance between 2484-2997 MHz —-15 —dBm—
BLOCK1M:3 GHZ<SIG<12.75GHzBlocking performance between 3-12.5 GHz —-10 —dBm—
BTRX8(3)BLE1M:INTERMODInter modulation performance for BLEM —-36 —dBm—
BLE2M:INTERMODInter modulation performance for BLEM —-28.5 —dBm—
Note:
  1. Measured at 25℃ averaged across all voltages and channels.
  2. Measured on a board with the reference schematic.
  3. All measurement across voltage based on the SIG specifications.
  4. PDU length = 37, channels = 2402/2426/2440/2480 MHz.
Table 43-39. WBZ451H Bluetooth Low Energy RF Characteristics
AC CharacteristicsStandard Operating Conditions: VDDIO = VDDANA 1.9-3.6V (unless otherwise stated)

Operating Temperature: -40°C ≤ TA ≤ +85°C for Industrial Temp

Param. No.SymbolCharacteristicsMin.Typ.Max.UnitsConditions
BTG1FREQFrequency range of operation2402—2480MHz—
BTX1TXPWR:WBZ451HBluetooth® transmit power at 3.3V —19.8 —dBm —
Bluetooth transmit power at 2.5V —18.6 —dBm —
Bluetooth transmit power at 1.9V —16.8 —dBm —
BTX2TXIB:1MBPSIn-band emission for FTX ± 2 MHz —-26.2 —dBm —
In-band emission for FTX ± (3+N) MHz —-37.8 —dBm —
BTX3TXIB:2MBPSIn-band emission for FTX ± 4MHz —-34.6 —dBm —
In-band emission for FTX ± 5 MHz —-40.1 —dBm —
In-band emission for FTX ± (6+N) MHz —-43.3 —dBm —
BTRX1RXSENSEReceiver sensitivity at 1 Mbps —-99.6 —dBm —
Receiver sensitivity at 2 Mbps —-96.6 —dBm —
Receiver sensitivity at S = 8 —-107.1 —dBm —
Receiver sensitivity at S = 2 —-103.6 —dBm —
BTRX2MAXINSIGMaximum input signal level at 1 Mbps —-10 —dBm —
Maximum input signal level at 2 Mbps —-10 —dBm —
Maximum input signal level at S = 2 —-10 —dBm —
Maximum input signal level at S = 8 —-10 —dBm —
BTRX3CI1M:COCHC/I Co channel rejection —14 —dB —
CI1M:± 1MHzC/I adjacent channel rejection —14 —dB —
CI1M:± 2MHzC/I adjacent channel rejection —12 —dB —
CI1M:ADJ(3+n)C/I alternate channel rejection —9 —dB —
CI1M:IMGC/I image frequency rejection —13 —dB —
CI1M:IMG± 1MHzC/I adjacent channel to image frequency rejection —12 —dB —
BTRX4CIS2:COCHC/I Co channel rejection —12 —dB —
CIS2:± 1MHzC/I adjacent channel rejection —19 —dB —
CIS2:± 2MHzC/I adjacent channel rejection —15 —dB —
CIS2:ADJ(3+n)C/I alternate channel rejection —15 —dB —
CIS2:IMGC/I image frequency rejection —11 —dB —
CIS2:IMG± 1MHzC/I adjacent channel to image frequency rejection —16 —dB —
BTRX5CIS8:COCHC/I Co channel rejection —8 —dB —
CIS8:± 1MHzC/I adjacent channel rejection —15 —dB —
CIS8:± 2MHzC/I adjacent channel rejection —11 —dB —
CIS8:ADJ(3+n)C/I alternate channel rejection —14 —dB —
CIS8:IMGC/I image frequency rejection —7 —dB —
CIS2:IMG± 1MHzC/I Adjacent channel to image frequency rejection —14 —dB —
BTRX6CI2M:COCHC/I Co channel rejection —15 —dB —
CI2M:± 2MHzC/I adjacent channel rejection —18 —dB —
CI2M:± 4MHzC/I adjacent channel rejection —16 —dB —
CI2M:ADJ(6+2n)C/I alternate channel rejection —9 —dB —
CI2M:IMGC/I image frequency rejection —13 —dB —
CI2M:IMG± 2MHzC/I adjacent channel to image frequency rejection —18 —dB —
BTRX7BLOCK1M:<2GHZBlocking performance from 30 MHz to 2 GHz —20 —dB —
BLOCK1M:2GHZ<SIG<2399MHzBlocking performance from 2003 MHz to 2399 MHz —20 —dB —
BLOCK1M:2484MHZ<SIG<2977MHzBlocking performance between 2484 MHz to 2997 MHz —20 —dB —
BLOCK1M:3GHZ<SIG<12.75GHzBlocking Performance between 3 GHz to 12.5 GHz —20 —dB —
BTRX8BLE1M:INTERMODInter-modulation performance for BLEM —10.5 —dB —
BLE2M:INTERMODInter-modulation performance for BLEM —14.5 —dB —
Note:
  1. Sensitivity related items are covering voltage range from 1.9V to 3.6V.
  2. Except for the dedicated voltage condition case, the TX related items are operating voltage from 1.9V to 3.6V.
Table 43-40. WBZ45 Bluetooth Low Energy LPA RF Characteristics
AC CharacteristicsStandard Operating Conditions: VDDIO = VDDANA 1.9V to 3.6V (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for Industrial

-40°C ≤ TA ≤ +125°C for Extended Temp

Param. No.SymbolCharacteristicsMin.TypMax.UnitsConditions
BTLG1FREQFrequency range of operation2402—2480MHz —
BTLTX2TXPWR:LPABluetooth® transmit power LPA —5.47 —dBm—
BTLX3TXIB:1MBPSIn-band emission for FTX ± 2 MHz—-40—dBm —
In-band emission for FTX ± (3+N) MHz —-49 —dBm —
BTX4TXIB:2MBPSIn-band emission for FTX ± 4 MHz —-46 —dBm —
In-band emission for FTX ± 5 MHz —-51 —dBm—
In-band emission for FTX ± (6+N) MHz—-54—dBm —
BTLRX1RXSENSEReceiver sensitivity at 1Mbps —-97 —dBm —
Receiver sensitivity at 2 Mbps —-94 —dBm—
Receiver sensitivity at S = 8 —-104 —dBm —
Receiver sensitivity at S = 2—-101—dBm —
BTLRX2MAXINSIGMaximum Input signal level at 1 Mbps —0 —dBm —
Maximum Input signal level at 2 Mbps —0 —dBm—
Maximum Input signal level at S = 2 —0 —dBm —
Maximum Input signal level at S = 8—0—dBm —
Note:
  1. Measured at 25℃ averaged across all voltages and channels.
  2. Measured on a board with the reference schematic.
  3. All measurement across voltage based on the SIG specifications.
  4. PDU length = 37, channels = 2402/2426/2440/2480 MHz.
Table 43-41. WBZ45 Bluetooth Low Energy RF Current Characteristics
AC CharacteristicsStandard Operating Conditions: VDDIO = VDDANA 1.9-3.6V (unless otherwise stated)

Operating Temperature: -40°C ≤ TA ≤ +85°C for Industrial Temp

-40°C ≤ TA ≤ +125°C for Extended Temp

Param. No.SymbolCharacteristicsRF PowerCPU FrequencyMin.Typ.Max.UnitsConditions
IBLETX1IDDTXMPACurrent consumption with output power in DC-DC mode 1 Mbps+12 dBm64 MHz—42.8—mA —
IBLETX4Current consumption at +12 dBm output power in MLDO mode+12 dBm64 MHz—96.7—mA —
IBLETX7IDDTXLPACurrent consumption at +4 dBm output power in DC-DC mode 1 Mbps4 dBm64 MHz—24.9—mA —
IBLETX10Current consumption at +4 dBm output power in MLDO mode4 dBm64 MHz—55.5—mA —
IBLETX7IDDTXLPA0Current consumption at +0 dBm output power in DC-DC mode 1 Mbps0 dBm64 MHz—22.7—mA —
IBLETX10Current consumption at 0 dBm output power in MLDO mode0 dBm64 MHz—47.6—mA —
IBLERX1IDDRXBLE1MCurrent consumption at RX signal level -80 dBm in DC-DC mode -80 dBm64 MHz—20.6—mA —
IBLERX4Current consumption at RX signal level -80 dBm in MLDO mode -80 dBm64 MHz—40.6—mA—
Note:
  • Current consumption is measured on a board based upon the Microchip Technology Reference Design.
  • Current consumption is for the entire SoC (including the MCU) measured at the input power rail.
  • Current reported is the average of the current during the transmit or receive burst (exclude off cycle of the transmit/receive operation).
Table 43-42. WBZ451H Bluetooth Low Energy RF Current Characteristics
AC CharacteristicsStandard Operating Conditions: VDDIO = VDDANA 1.9-3.6V (unless otherwise stated)

Operating Temperature: -40°C ≤ TA ≤ +85°C for Industrial Temp

Param. No.SymbolCharacteristicsRF PowerCPU FrequencyMin.Typ.Max.UnitsConditions
IBLETX1IDDTXWBZ451HCurrent consumption at +19.5 dBm output power in DC-DC mode 1 Mbps+19.5 dBm64 MHz—139.7—mA—
IBLETX2+19.5 dBm48 MHz —138.9 —mA —
IBLETX3IDDTXWBZ451HCurrent consumption at +15 dBm output power in DC-DC mode 1 Mbps+15 dBm64 MHz —87.9 —mA —
IBLETX4+15 dBm48 MHz —86.8—mA—
IBLETX5Current consumption at +15 dBm output power in MLDO mode+15 dBm64 MHz—96.9 —mA —
IBLETX6+15 dBm48 MHz —94.5 —mA —
IBLETX7IDDTXWBZ451HCurrent consumption at +10 dBm output power in DC-DC mode 1 Mbps+10 dBm64 MHz—64.1 —mA —
IBLETX8+10 dBm48 MHz —62.9—mA—
IBLETX9Current consumption at +10 dBm output power in MLDO mode+10 dBm64 MHz —76.5—mA—
IBLETX10+10 dBm48 MHz —74.3 —mA —
IBLETX11IDDTXWBZ451HCurrent consumption at 0 dBm output power in DC-DC mode 1 Mbps+0 dBm64 MHz—44.6 —mA —
IBLETX12+0 dBm48 MHz —43.6 —mA —
IBLETX13Current consumption at 0 dBm output power in MLDO mode+0 dBm64 MHz—60.5—mA—
IBLETX14+0 dBm48 MHz —57.9—mA—
IBLETX15IDDTXBYPCurrent consumption at -4 dBm output power in DC-DC mode 1 Mbps-4 dBm64 MHz —25.4 —mA —
IBLETX16-4 dBm48 MHz —24.2 —mA —
IBLETX17Current consumption at -4 dBm output power in MLDO mode-4 dBm64 MHz—48.2 —mA —
IBLETX18-4 dBm48 MHz —46.1—mA—
IBLERX1IDDRXBLE1MCurrent consumption at RX signal level -80 dBm in DC-DC mode-80 dBm64 MHz—25.8 —mA —
IBLERX2-80 dBm48 MHz —24.6 —mA —
IBLERX3Current consumption at RX signal level -80 dBm in MLDO mode-80 dBm64 MHz —43.9 —mA —
IBLERX4-80 dBm48 MHz —41.5—mA—
Note:
  1. DC-DC mode operation in 3.3V; MLDO mode operation in 1.9V.
Table 43-43. WBZ45 Bluetooth Low Energy RF Current LPA Characteristics
AC CharacteristicsStandard Operating Conditions: VDDIO = VDDANA 1.9-3.6V (unless otherwise stated)

Operating Temperature: -40°C ≤ TA ≤ +85°C for Industrial Temp

-40°C ≤ TA ≤ +125°C for Extended Temp

Param. No.SymbolCharacteristicsRF PowerCPU FrequencyMin.Typ.Max.UnitsConditions
IBLETX1IDDTXMPA

Current consumption with output power 5.5 dBm in DC-DC mode 1 Mbps

+5.5 dBm64 MHz—24.1—mAVDD = 3.3V
IBLETX4

Current consumption at +5.5 dBm output power in MLDO mode

+5.5 dBm64 MHz—46.9—mAVDD = 3.3V
IBLETX7IDDTXLPA

Current consumption at +0 dBm output power in DC-DC mode 1 Mbps

0 dBm64 MHz—20.6—mAVDD = 3.3V
IBLETX10Current consumption at +0 dBm output power in MLDO mode 1 Mbps0 dBm64 MHz—40.4—mAVDD = 3.3V
IBLETX7IDDTXLPA0Current consumption at -5 dBm output power in DC-DC mode 1 Mbps-5 dBm64 MHz—19.2—mAVDD = 3.3V
IBLETX10Current consumption at -5 dBm output power in MLDO mode 1 Mbps-5 dBm64 MHz—37.5—mAVDD = 3.3V
IBLERX1IDDRXBLE1MCurrent consumption at RX signal level -80 dBm in DC-DC mode-80 dBm64 MHz—21.2—mAVDD = 3.3V
IBLERX4Current consumption at RX signal level -80 dBm in MLDO mode-80 dBm64 MHz—39.9—mAVDD = 3.3V
Figure 43-30. Module Bluetooth Low Energy Receive Sensitivity vs Temperature
Note:
  • Bluetooth Low Energy receive sensitivity is measured across temperature at 3.6V, 2440 MHz, uncoded data at 1 Ms/s.
  • PDU length = 37.
  • Sensitivity is measured according to the SIG specifications.
Figure 43-31. Module Bluetooth Low Energy Receive Sensitivity vs Frequency
Note:
  • Bluetooth Low Energy sensitivity is measured across channels at 3.6V at 25℃, uncoded data at 1 Ms/s.
  • PDU length = 37.
  • Sensitivity is measured according to the SIG specifications.
Figure 43-32. Bluetooth Low Energy 1M CI Margin
Note:
  • Bluetooth Low Energy 1M C/I Margin is measured at 2440 MHz at 25℃, 3.6V, uncoded data at 1 Ms/s.
  • Reported C/I margin is the margin above the C/I specifications from SIG.
Figure 43-33. Bluetooth Low Energy Receive Sensitivity vs Voltage
Note:
  • Bluetooth Low Energy receive sensitivity is measured at 2440 MHz at 25℃, uncoded data at 1 Ms/s.
  • PDU length = 37.
  • Sensitivity is measured according to the SIG specifications.
Figure 43-34. Bluetooth Low Energy Receive Sensitivity vs Temperature
Note:
  • Bluetooth Low Energy receive sensitivity is measured across channels at 3.6V, 2440 MHz, uncoded data at 1 Ms/s.
  • PDU length = 37.
  • Sensitivity is measured according to the SIG specifications.
Figure 43-35. Bluetooth Low Energy Receive Sensitivity vs Frequency
Note:
  • Bluetooth Low Energy receiver sensitivity is measured across channels at 3.6V at 25℃, uncoded data at 1 Ms/s.
  • PDU length = 37.
  • Sensitivity is measured according to the SIG specifications.
Figure 43-36. Bluetooth Low Energy Receive Current vs Temperature
Note:
  • Bluetooth Low Energy receive current is measured at 3.3V (Buck mode), uncoded data at 1 Ms/s with LNA configured at maximum gain.
  • PDU length = 37.
  • Current is measured on input power rail to SoC (includes processor current as well).
Figure 43-37. Bluetooth Low Energy Transmit Power vs Frequency
Note:
  • Bluetooth Low Energy transmit power is measured across frequency after transmit power calibration at 3.3V (Buck mode).
  • Transmit power is measured after the PA matching and LPF.
Figure 43-38. Bluetooth Low Energy Transmit Power vs Transmit Power Level
Note:
  • Bluetooth Low Energy transmit power is measured at 2440 MHz after transmit power calibration.

  • Transmit power is measured on board based on Microchip Technology Reference Design.

  • Transmit power is measured after PA match and LPF.

Figure 43-39. Bluetooth Low Energy Transmit Power vs VDD Supply Voltage
Note:
  • Bluetooth Low Energy transmit power is measured across voltage after transmit power calibration.

  • Transmit power is measured after calibration at +12 dBm (± 0.5 dBm).

  • Transmit power is measured on board based on the Microchip Reference Design.

  • Transmit power is measured after the LPA and PA match section.

Figure 43-40. Bluetooth Low Energy Transmit Power vs. Temperature
Note:
  • Bluetooth Low Energy transmit power is measured across temperature after transmit power calibration at 3.6V and 2440 MHz.
  • Temperature power compensation is triggered before power measurement.
  • Transmit power is measured after the PA matching and LPF.
Figure 43-41. Bluetooth Low Energy Transmit Current vs Temperature
Note:
  • Bluetooth Low Energy transmit current is measured at 3.3V (Buck mode) at 2440 MHz across temperature.
  • Transmit current is measured after calibration at +12 dBm (± 0.5 dBm).
  • Current is measured on input power rail to SoC.