4 DDR3L SDRAM Features
The SAMA7D6 Series SiP is available with 1-Gbit or 2-Gbit DDR3L SDRAM memory options. For power consumption, electrical characteristics and timings of these memories, refer to the manufacturers’ data sheets listed in Reference Documents.
- Power supply: DDR3L DDRM_VDD = 1.283V to 1.45V
- 2-Kbyte page size (x16)
- 8-bank operation controlled by BA0, BA1 and BA2
- Burst lengths (BL): 8 and 4 with Burst Chop (BC)
- Precharge: auto-precharge option for each burst access
- Refresh: auto-refresh, self-refresh
- Average refresh period:
- 7.8 µs at -40°C ≤ TJ ≤ +85°C
- 3.9 µs at +85°C < TJ ≤ +95°C
- 1.95 µs at +95°C < TJ ≤ +105°C
- High-speed data transfer realized by the 8-bit prefetch pipelined architecture
- Double Data Rate architecture: two data transfers per clock cycle
- Bidirectional differential data strobe (DQS and /DQS) transmitted/received with data for capturing data at the receiver
- DQS edge-aligned with data for reads and center-aligned with data for writes
- Differential clock inputs (CK and /CK)
- DLL aligns DQ and DQS transitions with CK transitions
- Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
- Data mask (DM) for write data
- Posted CAS by programmable additive latency for better command and data bus efficiency
- MultiPurpose Register (MPR) for predefined pattern read out
- ZQ calibration for DQ drive and ODT
- Programmable Partial Array Self-Refresh (PASR)
- Reset pin for power-up sequence and reset function
- Self-Refresh Temperature (SRT) range: normal/extended
- Automatic Self-Refresh (ASR)
- Programmable output driver impedance control