49.29 FLASH NVM AC Electrical Specifications
AC Characteristics | Standard
Operating Conditions: VDD33 = VDDIO = AVDD = 1.9–3.6V (Unless Otherwise
Stated) Operating Temperature: -40°C ≤ TA ≤ +125°C for Extended Temperature | |||||||
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Parameter Number | Symbol | Characteristics | Min. | Typical | Max. | Units | Conditions | |
NVM_1 | FRETEN | Flash Data Retention | 20 | — | — | Yrs | Under all conditions less than Absolute Maximum Ratings specifications | |
NVM_3 | EP | Cell Endurance (Flash Erase and Wite Operation) | 20k | — | — | Cycles | ||
Cell Endurance (Flash Erase/Retry and Write Operation) | 100k | — | — | Cycles | ||||
NVM_5 | FREAD | Flash Read | 0 Wait States | — | — | 25.6 | MHz | VDDIO = 1.9V, CHECON.PFMWS[3:0] |
1 Wait States | — | — | 51.2 | |||||
2 Wait States | — | — | 76.8 | |||||
3 Wait States | — | — | 102.4 | |||||
4 Wait States | — | — | 128 | |||||
0 Wait States | — | — | 64 | MHz | VDDIO = 1.9V, CHECON.ADRWS | |||
1 Wait States | — | — | 128 | |||||
NVM_7 | TFPW | Program Cycle Time | Write Row | — | — | 2.6 | ms | — |
NVM_9 | TCE | Erase Chip | — | — | 20 | ms | — | |
NVM_11 | TFEB | Erase Page | — | — | 1.25 | ms | 20K Endurance | |
Erase Page | — | — | 8 | ms | 100K Endurance with Erase/Retry | |||
Note:
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