45.11 NVM Characteristics

Table 45-41. NVM Max Speed Characteristics
CPU F_MAX (MHz)	0WS	1WS	2WS
VDD>2.7V	19	38	64
VDD>4.5V	20	38	64

Table 45-42. NVM Timing Characteristics
Symbol	Parameter	Max.	Units
t_FPP	Page Write ⁽¹⁾	2.5	ms
t_FRE	Row erase ⁽¹⁾	6	ms
t_FSE	Chip erase ⁽¹⁾	260	ms

Note:

These values are based on simulation, and are not covered by test or characterization. For this Flash technology, a maximum number of 8 consecutive writes is allowed per row. Once this number is reached, a row erase is mandatory.

Table 45-43. Flash Endurance and Data Retention
Symbol	Parameter	Conditions	Min.	Typ.	Units
Ret_NVM25k	Retention after up to 25k	Average ambient 55°C	10	50	Years
Ret_NVM2.5k	Retention after up to 2.5k	Average ambient 55°C	20	100	Years
Ret_NVM100	Retention after up to 100	Average ambient 55°C	25	>100	Years
Cyc_NVM	Cycling Endurance⁽¹⁾	-40°C < T_A < 85°C	25k	-	Cycles

Note:

An endurance cycle is a write and an erase operation.

Table 45-44. EEPROM Emulation⁽¹⁾ Endurance and Data Retention
Symbol	Parameter	Conditions	Min.	Typ.	Units
Ret_EEPROM100k	Retention after up to 100k	Average ambient 55°C	10	50	Years
Ret_EEPROM10k	Retention after up to 10k	Average ambient 55°C	20	100	Years
Cyc_EEPROM	Cycling Endurance⁽²⁾	-40°C < Ta < 85°C	100k	-	Cycles

Note:

The EEPROM emulation is a software emulation described in the Application Note “AT03265”.
An endurance cycle is a write and an erase operation.

Table 45-45. Flash erase and programming current
Symbol	Parameter	Typ.	Units
I_DDIN	Maximum Current (peak) during whole programming or erase operation	10	mA

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