48.1 Absolute Maximum Ratings


Parameter		Rating
Ambient temperature under bias		-40°C to +125°C
Storage temperature		-65°C to +150°C
Voltage on pins with respect to V_SS
on V_DD pin:		-0.3V to +6.5V
on V_DDIO2 pin:		-0.3V to +6.5V
on MCLR pin:		-0.3V to +9.0V
on pins on V_DD domain:		-0.3V to (V_DD + 0.3V)
on pins (without I²C/SMBus Functionality on V_DDIO2 domain:		-0.3V to +5.5V
on pins (with I²C/SMBus Functionality on V_DDIO2 domain:		-0.3V to +6.5V
Maximum current⁽¹⁾
on V_SS pin	-40°C ≤ T_A ≤ +85°C	350 mA
on V_SS pin	85°C < T_A ≤ +125°C	120 mA
on V_DD pin (28-pin devices)	-40°C ≤ T_A ≤ +85°C	350 mA
on V_DD pin (28-pin devices)	85°C < T_A ≤ +125°C	120 mA
on V_DDIO2 pin	-40°C ≤ T_A ≤ +85°C	190 mA
on V_DDIO2 pin	85°C < T_A ≤ +125°C	65 mA
on pins on the V_DD domain		±50 mA
on pins on the V_DDIO2 domain		±50 mA
Clamp current, I_K (V_PIN < 0 or V_PIN > V_DD)		±20 mA
Total power dissipation⁽²⁾		800 mW

Note:

Maximum current rating requires even load distribution across I/O pins. Maximum current rating may be limited by the device package power dissipation characterizations. See the Thermal Characteristics section to calculate device specifications.
Power dissipation is calculated as follows:
P_DIS = V_DD x {I_DD - Σ I_OH} + Σ {(V_DD - V_OH) x I_OH} + Σ (V_OI x I_OL)
Internal Power Dissipation is calculated as follows:
P_INTERNAL = I_DD x V_DD
where I_DD is current to run the chip alone without driving any load on the output pins.
I/O Power Dissipation is calculated as follows:
P_I/O = Σ(I_OL*V_OL)+Σ(I_OH*(V_DD-V_OH))
Derated Power is calculated as follows:
P_DER = PD_MAX(T_J-T_A)/θ_JA
where T_A = Ambient Temperature, T_J = Junction Temperature.

: Stresses above those listed under the “Absolute Maximum Ratings” section may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure above maximum rating conditions for extended periods may affect device reliability.