SAM L10/L11 devices embed 16 KB, 32 KB or 64 KB of internal Flash mapped at address 0x0000 0000.
The Flash has a 512-byte (64 lines of 8 bytes) direct-mapped cache which is enabled by default after power up.
The Flash is organized into rows, where each row contains four pages. The Flash has a row-erase and a page-write granularity.
Device | Memory Size [KB] | Number of Rows | Row size [Bytes] | Number of Pages | Page size [Bytes] |
---|---|---|---|---|---|
SAM L11x16 / SAM L10x16 (1) | 64 | 256 | 256 | 1024 | 64 |
SAM L11x15 / SAM L10x15 (1) | 32 | 128 | 256 | 512 | 64 |
SAM L11x14 / SAM L10x14 (1) | 16 | 64 | 256 | 256 | 64 |
The Flash is divided in different regions. Each region has a dedicated lock bit preventing from writing and erasing pages on it. Refer to the NVM Memory Organization figures in the chapter “NVMCTRL” to get the different regions definition.
Device | SAM L10 | SAM L11 |
---|---|---|
Number of Flash Lock Regions | 2 | 4 |
Regions Name |
Flash (BOOT region) / Flash (APPLICATION region) |
Secure Flash (BOOT region) / Non-Secure Flash (BOOT region) Secure Flash (APPLICATION region) / Non-Secure Flash (APPLICATION region) |