Data Flash

The SAM L10/L11 devices embed 2 KB of internal Data Flash with Write-While-Read (WWR) capability mapped at address 0x0040 0000.

The Data Flash can be programmed or erased while reading the Flash memory. It is not possible to read the Data Flash while writing or erasing the Flash.

Note: The Data Flash memory can be executable but requires more cycles to be read which may affect system performance.

The Data Flash cannot be cached. The Data Flash is organized into rows, where each row contains four pages. The Data Flash has a row-erase and a page-write granularity.

CAUTION: For this Flash technology, a maximum number of 8 consecutive writes is allowed per row. Once this number is reached, a row erase is mandatory.

Table 1. Data Flash Memory Parameters
Device	Memory Size [KB]	Number of Rows	Row size [Bytes]	Number of Pages	Page size [Bytes]
SAM L10/L11	2	8	256	32	64

The Data Flash is divided into one or two regions. Each region has a dedicated lock bit preventing from writing and erasing pages on it. Refer to the NVM Memory Organization figures in the Chapter “NVMCTR” to obtain the definitions of the different regions.

Note: The regions size is configured by the Boot ROM at device startup by reading the NVM Boot Configuration Row (BOCOR).

Table 2. Data Flash Lock Regions Parameters
Device	SAM L10	SAM L11
Number of Data FLASH Lock Regions	1	2
Regions Name	Data Flash	Secure Data Flash / Non-Secure Data Flash