7 AC/DC Characteristics and Timing Requirements

Table 7-1 lists the AC/DC characteristics and timing requirements.

Table 7-1. AC/DC Characteristics and Timing Requirements
Standard Operating Conditions

Operating Temperature: -40ºC to +125ºC. Programming at +25ºC is recommended.

Param. No.SymbolCharacteristicMin.Max.UnitsConditions

D111

VDD

Supply Voltage During Programming

3.0

3.60

V

Normal programming(1)

D113

IDDP

Supply Current During Programming

10

mA

D114

IPEAK

Instantaneous Peak Current During Start-up

200

mA

D031

VIL

Input Low Voltage

Vss

0.2 Vdd

V

D041

VIH

Input High Voltage

0.7 Vdd

Vdd

V

D080

VOL

Output Low Voltage

0.4

V

D090

VOH

Output High Voltage

2.4

V

D012

CIO

Capacitive Loading on I/O Pin (PGEDx)

50

pF

P1

TPGC

Serial Clock (PGECx) Period (ICSP™)

200

ns

P1

TPGC

Serial Clock (PGECx) Period (Enhanced ICSP)

500

ns

P1A

TPGCL

Serial Clock (PGECx) Low Time (ICSP)

80

ns

P1A

TPGCL

Serial Clock (PGECx) Low Time (Enhanced ICSP)

200

ns

P1B

TPGCH

Serial Clock (PGECx) High Time (ICSP)

80

ns

P1B

TPGCH

Serial Clock (PGECx) High Time (Enhanced ICSP)

200

ns

P2

TSET1

Input Data Setup Time to Serial Clock ↓

15

ns

P3

THLD1

Input Data Hold Time from PGECx ↓

15

ns

P4

TDLY1

Delay Between 4-Bit Command and Command Operand

40

ns

P4A

TDLY1A

Delay Between Command Operand and Next 4-Bit Command

40

ns

P5

TDLY2

Delay Between Last PGECx ↓ of Command to First PGECx ↑ of Read of Data Word

20

ns

P6

TSET2

VDD ­ Setup Time to MCLR ­

100

ns

P7

THLD2

Input Data Hold Time from MCLR

50

ms

P8

TDLY3

Delay Between Last PGECx ↓ of Command Byte to PGEDx ↑ by PE

12

µs

P9A

TDLY4

Programming Executive Command Processing Time

10

µs

P9B

TDLY5

Delay Between PGEDx ↓ by Programming Executive to PGEDx Released by Programming Executive

15

23

µs

P10

TDLY6

PGECx Low Time After Programming

400

ns

P11

TDLY7

Bulk Erase Time

20.0

ms

See Note 2.

P12

TDLY8

Page Erase Time

20.0

ms

See Note 2.

P13

TDLY9

Double-Word Write Time

52.3

µs

See Note 2.

Row Write Time

2.2

ms

See Note 2.

P14

TR

MCLR Rise Time to Enter ICSP mode

1.0

µs

P15

TVALID

Data Out Valid from PGECx ↑

10

ns

P16

TDLY10

Delay Between Last PGECx ↓ and MCLR

0

s

P17

THLD3

MCLR ↓ to VDD

100

ns

P18

TKEY1

Delay from First MCLR ↓ to First PGECx ↑ for Key Sequence on PGEDx

1

ms

P19

TKEY2

Delay from Last PGECx ↓ for Key Sequence on PGEDx to Second MCLR

25

ns

P21

TMCLRH

MCLR High Time

500

µs

Note:
  1. VDD must also be supplied to the AVDD pins during programming. AVDD and AVSS should always be within ±0.3V of VDD and VSS, respectively.
  2. Time depends on the FRC accuracy and the value of the FRC Oscillator Tuning register. Refer to the “Electrical Characteristics” chapter in the specific device data sheet.