7 AC/DC Characteristics and Timing Requirements
Table 7-1 lists the AC/DC characteristics and timing requirements.
| Standard
Operating Conditions Operating Temperature: -40ºC to +125ºC. Programming at +25ºC is recommended. | ||||||
|---|---|---|---|---|---|---|
| Param. No. | Symbol | Characteristic | Min. | Max. | Units | Conditions |
|
D111 |
VDD |
Supply Voltage During Programming |
3.0 |
3.60 |
V |
Normal programming(1) |
|
D113 |
IDDP |
Supply Current During Programming |
— |
10 |
mA | |
|
D114 |
IPEAK |
Instantaneous Peak Current During Start-up |
— |
200 |
mA | |
|
D031 |
VIL |
Input Low Voltage |
Vss |
0.2 Vdd |
V | |
|
D041 |
VIH |
Input High Voltage |
0.7 Vdd |
Vdd |
V | |
|
D080 |
VOL |
Output Low Voltage |
— |
0.4 |
V | |
|
D090 |
VOH |
Output High Voltage |
2.4 |
— |
V | |
|
D012 |
CIO |
Capacitive Loading on I/O Pin (PGEDx) |
— |
50 |
pF | |
|
P1 |
TPGC |
Serial Clock (PGECx) Period (ICSP™) |
200 |
— |
ns | |
|
P1 |
TPGC |
Serial Clock (PGECx) Period (Enhanced ICSP) |
500 |
— |
ns | |
|
P1A |
TPGCL |
Serial Clock (PGECx) Low Time (ICSP) |
80 |
— |
ns | |
|
P1A |
TPGCL |
Serial Clock (PGECx) Low Time (Enhanced ICSP) |
200 |
— |
ns | |
|
P1B |
TPGCH |
Serial Clock (PGECx) High Time (ICSP) |
80 |
— |
ns | |
|
P1B |
TPGCH |
Serial Clock (PGECx) High Time (Enhanced ICSP) |
200 |
— |
ns | |
|
P2 |
TSET1 |
Input Data Setup Time to Serial Clock ↓ |
15 |
— |
ns | |
|
P3 |
THLD1 |
Input Data Hold Time from PGECx ↓ |
15 |
— |
ns | |
|
P4 |
TDLY1 |
Delay Between 4-Bit Command and Command Operand |
40 |
— |
ns | |
|
P4A |
TDLY1A |
Delay Between Command Operand and Next 4-Bit Command |
40 |
— |
ns | |
|
P5 |
TDLY2 |
Delay Between Last PGECx ↓ of Command to First PGECx ↑ of Read of Data Word |
20 |
— |
ns | |
|
P6 |
TSET2 |
VDD Setup Time to MCLR |
100 |
— |
ns | |
|
P7 |
THLD2 |
Input Data Hold Time from MCLR ↑ |
50 |
— |
ms | |
|
P8 |
TDLY3 |
Delay Between Last PGECx ↓ of Command Byte to PGEDx ↑ by PE |
12 |
— |
µs | |
|
P9A |
TDLY4 |
Programming Executive Command Processing Time |
10 |
— |
µs | |
|
P9B |
TDLY5 |
Delay Between PGEDx ↓ by Programming Executive to PGEDx Released by Programming Executive |
15 |
23 |
µs | |
|
P10 |
TDLY6 |
PGECx Low Time After Programming |
400 |
— |
ns | |
|
P11 |
TDLY7 |
Bulk Erase Time |
— |
20.0 |
ms |
See Note 2. |
|
P12 |
TDLY8 |
Page Erase Time |
— |
20.0 |
ms |
See Note 2. |
|
P13 |
TDLY9 |
Double-Word Write Time |
— | 52.3 |
µs |
See Note 2. |
|
Row Write Time |
2.2 |
ms |
See Note 2. | |||
|
P14 |
TR |
MCLR Rise Time to Enter ICSP mode |
— |
1.0 |
µs | |
|
P15 |
TVALID |
Data Out Valid from PGECx ↑ |
10 |
— |
ns | |
|
P16 |
TDLY10 |
Delay Between Last PGECx ↓ and MCLR ↑ |
0 |
— |
s | |
|
P17 |
THLD3 |
MCLR ↓ to VDD ↓ |
100 |
— |
ns | |
|
P18 |
TKEY1 |
Delay from First MCLR ↓ to First PGECx ↑ for Key Sequence on PGEDx |
1 |
— |
ms | |
|
P19 |
TKEY2 |
Delay from Last PGECx ↓ for Key Sequence on PGEDx to Second MCLR ↑ |
25 |
— |
ns | |
|
P21 |
TMCLRH |
MCLR High Time |
— |
500 |
µs | |
|
Note:
| ||||||
