| MEMTYPE_APPL_FLASH, MEMTYPE_BOOT_FLASH,
MEMTYPE_FLASH_PAGE | RW | R |
-
Used to read/write FLASH in programming or
debugging mode
-
Address is from base 0x000000, provided that
PROG_BASE is configured correctly (Device Context: AVR devices with
UPDI)
-
Any number of aligned words can be
accessed.
|
| MEMTYPE_APPL_FLASH_ATOMIC,
MEMTYPE_BOOT_FLASH_ATOMIC | W | - |
-
Used to write a full FLASH page in the application section in programming mode
-
The page is automatically erased before writing
-
Address is from base 0x000000, provided that
PROG_BASE is configured correctly (Device Context: AVR devices with
UPDI)
-
Writes are restricted to full pages only
|
| MEMTYPE_EEPROM, MEMTYPE_EEPROM_PAGE,
MEMTYPE_EEPROM_ATOMIC | RW | RW |
-
Used to write EEPROM in programming or
debugging mode
-
The page is automatically erased before
writing if the ATOMIC memtype is used.
-
Absolute EEPROM address must be provided
-
Any number of bytes can be accessed
|
| MEMTYPE_FUSES | RW | - |
|
| MEMTYPE_LOCK_BITS | RW | R |
-
Used to read/write LOCKBITS in programming or
debugging mode
-
Absolute lockbit address must be
provided
-
Only a single bytes can be accessed
|
| MEMTYPE_SIGNATURE,
MEMTYPE_CALIBRATION_SIGNATURE | R | R |
|
| MEMTYPE_USER_SIGNATURE | RW | RW |
-
Used to read/write the USER SIGNATURE in programming or debugging mode
-
Absolute signature address must be
provided
-
Any number of bytes can be accessed
- When writing user signature on a locked device, a full page write is
required.
|
| MEMTYPE_REGFILE | - | RW |
-
Used to read/write the general purpose registers in debugging mode
-
Address is from base 0x00
-
Any number of bytes can be accessed
|
| MEMTYPE_SRAM | - | RW |
|