Running code from the NRWW section of the Nonvolatile Memory (NVM) while performing page erases or Flash writes in the RWW section may lead to arbitrary code execution if a workaround is not implemented.
Work Around
When running code from the NRWW section of NVM and performing page erases or Flash writes in the RWW section, it is crucial to enter Idle sleep mode immediately after starting either operation. The device must remain in Idle sleep mode for the entire operation. After the operation is finalized, use the FLREADY interrupt flag to wake the device so that code execution can resume. No other interrupt sources are allowed during self-programming. The device frequency during self-programming must be 4 MHz or higher.
Affected Silicon Revisions
A0
X
DS80001125D
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