2.2.2 Reduced Flash Endurance for V_DD Below BODLEVEL3

If operating at V_DD below BODLEVEL3, Flash endurance is reduced to 1k erase/write cycles. The reduction is independent of the V_DD level during erase/write.

Work Around

None

Affected Silicon Revisions


Rev. A0	Rev. A2	Rev. A4
X	-	-

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2.2.2 Reduced Flash Endurance for VDD Below BODLEVEL3

Work Around

Affected Silicon Revisions

2.2.2 Reduced Flash Endurance for V_DD Below BODLEVEL3