4.3.1 DC Parameters: Single-Wire Interface – Parasitic Power Mode

Table 4-2. DC Parameters on Parasitic Single-Wire InterfaceUnless otherwise indicated, values are applicable over the specified operating range from TA = -40℃ to +105℃, CMOSen=1
Parameter Sym. Min. Typ. Max. Units Conditions
Ambient Operating Temperature TA -40 — +105 ℃ —
Max. I/O Voltage(1) VPUP 2.5 — 5.5 V RPUP must be chosen such that VPUP – RPUP*ICC ≥ 2.0V
Output Low Voltage VOL — — 0.4 V When the device is in Active mode, 
VPUP = 2.5V to 3.6V for output-low current = 8.0 mA
Input Low Leakage(3) IIL -200 — 200 nA VIN = GND
Input Low Threshold VIL1 -0.5 — 0.3*VSIO V CMOSen = 1
Input High Threshold VIH1 0.7*VSIO — VSIO+0.5 V CMOSen = 1
Sleep Current(2) ISLEEP — 130 325(4) nA

When the device is in Sleep mode, VSIO ≤ 3.6V,

I/O at GND

TA ≤ +55°C
— 130 500 nA

When the device is in Sleep mode, VSIO ≤ 3.6V,

I/O at GND

Full Temperature Range
— 130 1000 nA

When the device is in Sleep mode.

Over full VSIO and temperature range.
Current Consumption in I/O Mode II/O — 80 250 µA Waiting for I/O
Bus Capacitance CBUS — — 500 pF —
Theta JA ƟJA — TBD — °C/W 2-PAD VSFN
Note:
  1. Single-Wire voltage (VPUP) must never be greater than the maximum VPUP operating voltage.
  2. For the lowest system current, the SI/O signal must be driven to VPUP by the host or allowed to be pulled up by the pull-up resistors.
  3. Input High leakage can not be measured because the device and decoupling capacitor is charged via the SI/O signal.
  4. This condition is characterized but not production tested.