3.1.1 Features

A clarification has been made to change the Flash endurance specification in the Memories bullet point in the Features list.

  • Memories
    • 32 KB in-system self-programmable Flash memory
    • 512B EEPROM
    • 4 KB SRAM
    • 32B of user row in nonvolatile memory that can keep data during chip-erase and be programmed while the device is locked
    • Write/erase endurance
      • Flash: 1,000 cycles
      • EEPROM: 100,000 cycles
    • Data retention: 40 years at 55°C