6 Device Operation

READ: The AT28BV256 is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins are asserted on the outputs. The outputs are put in the high-impedance state when either CE or OE is high. This dual-line control gives designers flexibility in preventing bus contention in their system.

BYTE WRITE: A low pulse on the WE or CE input with CE or WE low (respectively) and OE high initiates a write cycle. The address is latched on the falling edge of CE or WE, whichever occurs last. The data are latched by the first rising edge of CE or WE. Once a byte write is started, it will automatically time itself to completion. Once a programming operation is initiated and for the duration of tWC, a read operation will effectively be a polling operation.

PAGE WRITE: The page write operation of the AT28BV256 allows one to 64 bytes of data to be written into the device during a single internal programming period. A page write operation is initiated in the same manner as a byte write; the first byte written can then be followed by one to 63 additional bytes. Each successive byte must be written within 150 µs (tBLC) of the previous byte. If the tBLC limit is exceeded, the AT28BV256 will cease accepting data and commence the internal programming operation. All bytes during a page write operation must reside on the same page as defined by the state of the A6‑A14 inputs. For each WE high‑to‑low transition during the page write operation, A6‑A14 must be the same. The A0 to A5 inputs are used to specify which bytes within the page are to be written. The bytes may be loaded in any order and may be altered within the same load period. Only bytes which are specified for writing will be written; unnecessary cycling of other bytes within the page does not occur.

DATA POLLING: The AT28BV256 features DATA Polling to indicate the end of a write cycle. During a byte or page write cycle, an attempted read of the last byte written will result in the complement of the written data to be presented on I/O7. Once the write cycle is complete, true data are valid on all outputs and the next write cycle may begin. DATA Polling may begin at any time during the write cycle.

TOGGLE BIT: In addition to DATA Polling, the AT28BV256 provides another method for determining the end of a write cycle. During the write operation, successive attempts to read data from the device will result in I/O6 toggling between one and zero. Once the write is completed, I/O6 will stop toggling and valid data will be read. Reading the toggle bit may begin at any time during the write cycle.

DATA PROTECTION: If precautions are not taken, inadvertent writes may occur during transitions of the host system power supply. Microchip incorporated both hardware and software features that will protect the memory against inadvertent writes.

HARDWARE PROTECTION: Hardware features protect against inadvertent writes to the AT28BV256 in the following ways:
  • VCC sense – if VCC is below 1.8V (typical), the write function is inhibited
  • VCC power‑on delay – once VCC has reached 1.8V, the device will automatically time out 10 ms (typical) before allowing a write
  • Write inhibit – holding any one of OE low, CE high or WE high inhibits write cycles
  • Noise filter – pulses of less than 15 ns (typical) on the WE or CE inputs will not initiate a write cycle

SOFTWARE DATA PROTECTION: A software-controlled data protection feature has been implemented on the AT28BV256. The software data protection (SDP) will prevent inadvertent writes from corrupting the data in the device. SDP can prevent inadvertent writes during power-up and power-down as well as during any other potential periods of system instability. The AT28BV256 is shipped with SDP enabled by default.

The AT28BV256 can only be written using the software data protection feature. A series of three write commands to specific addresses with specific data must be presented to the device before writing in the Byte or Page mode. The same three write commands must begin each write operation. All software write commands must obey the Page mode write timing specifications. The data in the 3‑byte command sequence is not written to the device; the address in the command sequence can be utilized just like any other location in the device.

Any attempt to write to the device without the 3‑byte command sequence will start the internal write timers. No data will be written to the device; however, for the duration of tWC, read operations will effectively be polling operations.

DEVICE IDENTIFICATION: An extra 64 bytes of EEPROM memory are available to the user for device identification. By raising A9 to 12V ± 0.5V and using address locations 7FC0H to 7FFFH, the bytes may be written to or read from in the same manner as the regular memory array.