Features

  • Fast Read Access Time: 200 ns
  • Automatic Page Write Operation:
    • Internally organized as 32,768 x 8 (256-Kbit)
    • Internal address and data latches for 64 bytes
    • Internal control timer
  • Fast Write Cycle Time:
    • Page Write cycle time: 10 ms maximum
    • 1 to 64-byte Page Write operation
  • Low-Power Dissipation:
    • 15 mA active current
    • 50 µA CMOS standby current
  • Hardware and Software Data Protection
  • DATA Polling for End of Write Detection
  • High Reliability CMOS Technology:
    • Endurance: 10,000 cycles
    • Data retention: 10 years
  • Single 2.7V to 3.6V Supply
  • JEDEC® Approved Byte-Wide Pinout
  • Industrial Temperature Range
  • Green RoHS-compliant Packaging Option