Features

• Fast Read Access Time: 200 ns
• Automatic Page Write Operation:
  • Internally organized as 32,768 x 8 (256-Kbit)
  • Internal address and data latches for 64 bytes
  • Internal control timer
• Fast Write Cycle Time:
  • Page Write cycle time: 10 ms maximum
  • 1 to 64-byte Page Write operation
• Low-Power Dissipation:
  • 15 mA active current
  • 50 µA CMOS standby current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology:
  • Endurance: 10,000 cycles
  • Data retention: 10 years
• Single 2.7V to 3.6V Supply
• JEDEC^® Approved Byte-Wide Pinout
• Industrial Temperature Range
• Green RoHS-compliant Packaging Option