6 Results
The test results provided in this application note are meant only as indications of the capabilities of a system like this. Several factors as layout, switching frequency, component accuracy, and more will influence the final result. Layout considerations and component accuracy was purposefully not optimized in the testing to give a better starting point for less experienced designers, which means it will be possible to achieve higher performance by optimizing the design to reduce loss and increase stability.
| Input voltage | Vin | 5-24V |
| Output voltage | Vout | 5V |
| Maximum power | Pmax | 5W |
| Output voltage ripple | ΔVout | 50 mV |
| Inductor ripple current | ΔI | 215 mA |
| Switching frequency | fsw | 100 kHz |
| Ideal Value | Used Value | |
|---|---|---|
| L | 220 µH | 220 µH |
| Cout | 10 µF | 10 µF |
| RFBT | 3.31 kΩ | 3.3 kΩ |
| RFBB | 1 kΩ | 1 kΩ |
| Rcomp | 84.9Ω | 85Ω |
| Ccomp | 552.6 nF | 600 nF |
| RFF | 105.8Ω | 100Ω |
| CFF | 14.2 nF | 15 nF |
| CHF | 37.5 nF | 40 nF |
A bootstrapped ILB88721 N-channel MOSFET was used for switching in conjunction with a 1N4007 rectifying diode, which both are rated for more power than Pmax.