39.3.5 Memory Programming Specifications

Table 39-5. 
Standard Operating Conditions (unless otherwise stated)
Param
 No.Sym.Device CharacteristicsMin.Typ†Max.UnitsConditions
High Voltage Entry Programming Mode Specifications
MEM01VIHHVoltage on MCLR/VPP pin to enter Programming mode8—9V(Note 2, Note 3)
MEM02IPPGMCurrent on MCLR/VPP pin during Programming mode—1—mA(Note 2)
Programming Mode Specifications
MEM10VBEVDD for Bulk Erase———V(Note 4)
MEM11IDDPGMSupply Current during Programming operation——10mA
Data EEPROM Memory Specifications
MEM20EDDataEE Byte Endurance100k——E/W-40°C≤TA≤+85°C
MEM21TD_RETCharacteristic Retention—40—YearProvided no other specifications are violated
MEM22ND_REFTotal Erase/Write Cycles before Refresh——100kE/W
MEM23VD_RWVDD for Read or Erase/Write operationVDDMIN—VDDMAXV
MEM24TD_BEWByte Erase and Write Cycle Time—4.05.0ms
Program Flash Memory Specifications
MEM30EPFlash Memory Cell Endurance10k——E/W-40°C≤Ta≤+85°C


(Note 1)

MEM32TP_RETCharacteristic Retention—40—YearProvided no other specifications are violated
MEM33VP_RDVDD for Read operationVDDMIN—VDDMAXV
MEM34VP_REWVDD for Row Erase or Write operationVDDMIN—VDDMAXV
MEM35TP_REWSelf-Timed Row Erase or Self-Timed Write—2.02.8ms

† - Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.

Note:
  1. Flash Memory Cell Endurance for the Flash memory is defined as: One Row Erase operation and one Self-Timed Write.
  2. Required only if CONFIG4, bit LVP is disabled.
  3. The MPLAB® ICD2 does not support variable VPP output. Circuitry to limit the ICD2 VPP voltage must be placed between the ICD2 and target system when programming or debugging with the ICD2.
  4. Refer to the “PIC16(L)F184XX Memory Programming Specification” document for description.