4.5.3 EEPROM Cell Performance Characteristics

Table 4-6. EEPROM Cell Performance Characteristics
Operation	Minimum	Maximum	Units	Test Condition
Write Endurance^{(1, 2)}	1,000,000	—	Write Cycles	T_A = 25°C, V_CC = 3.3V
Data Retention⁽¹⁾	100	—	Years	T_A = 55°C

Note:

Performance is determined through characterization and the qualification process.
Due to the memory array architecture, the Write Cycle Endurance is specified for writes in groups of four data bytes. The beginning of any 4-byte boundaries can be determined by multiplying any integer (N) by four (i.e., 4*N). The end address can be found by adding three to the beginning value (i.e., 4*N+3).