Features

  • Fast Read Access Time: 150 ns
  • Automatic Page Write Operation:
    • Internally organized as 32,768 x 8 (256K)
    • Internal address and data latches for 64 bytes
    • Internal control timer
  • Fast Write Cycle Time:
    • Page Write cycle time: 3 ms or 10 ms maximum
    • 1 to 64-byte Page Write operation
  • Low-Power Dissipation:
    • 50 mA active current
    • 300 µA CMOS standby current
  • Hardware and Software Data Protection
  • DATA Polling for End of Write Detection
  • High Reliability CMOS Technology:
    • Endurance: 10,000 or 100,000 cycles
    • Data retention: 10 years
  • Single 5V ± 10% Supply
  • CMOS and TTL Compatible Inputs and Outputs
  • JEDEC® Approved Byte-Wide Pinout