6.3 DC Characteristics

Table 6-4. DC Characteristics
Symbol	Parameter	Industrial (I): T_AMB = -40°C to +85°C Industrial Plus (V): T_AMB = -40°C to +105°C
Symbol	Parameter	Min.	Max.	Units	Conditions
I_DDR1	Read Current	—	35	mA	V_DD = V_DD maximum, CE# = 0.1 V_DD/0.9 V_DD @166 MHz, SIO = open
I_DDR2	Read Current	—	25	mA	V_DD = V_DD maximum, CE# = 0.1 V_DD/0.9 V_DD @80 MHz, SIO = open
I_DDR3	Read Current	—	30	mA	V_DD = V_DD maximum, CE# = 0.1 V_DD/0.9 V_DD @90 MHz DTR, SIO = open
I_DDW	Program and Erase Current	—	15	mA	CE# = V_DD
I_WRSR	Write Status Register Current (nonvolatile value)	—	12	mA	CE# = V_DD
I_SB1	Standby Current	—	40	μA	CE# = V_DD, V_IN = V_DD or V_SS (for Industrial Plus part)
I_SB2	Standby Current	—	30	μA	CE# = V_DD, V_IN = V_DD or V_SS (for Industrial part)
I_DPD1	Deep Power-Down Current	—	15	μA	CE# = V_DD, V_IN = V_DD or V_SS (for Industrial Plus part)
I_DPD2	Deep Power-Down Current	—	10	μA	CE# = V_DD, V_IN = V_DD or V_SS (for Industrial part)
I_LI	Input Leakage Current	—	+/-2	μA	V_IN = GND to V_DD, V_DD = V_DD maximum
I_LO	Output Leakage Current	—	+/-2	μA	V_IN = GND to V_DD, V_DD = V_DD maximum
V_IL	Input Low Voltage	-0.5	0.3 V_DD	V	V_DD = V_DD minimum
V_IH	Input High Voltage	0.7 V_DD	V_DD+0.4	V	V_DD = V_DD maximum
V_OL1	Output Low Voltage	—	0.2	V	I_OL = 100 μA, V_DD = V_DD minimum
V_OH	Output High Voltage	V_DD-0.2	—	V	I_OH = -100 μA, V_DD = V_DD minimum

Table 6-5. Capacitance (T_A = +25°C, F = 1 MHz, other pins open)
Parameter	Description	Test Condition	Maximum
C_OUT⁽¹⁾	Output Pin Capacitance	V_OUT = 0V	8 pF
C_IN⁽¹⁾	Input Capacitance	V_IN = 0V	6 pF

Note:

This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

Table 6-6. Reliability Characteristics
Symbol	Parameter	Minimum Specification	Units	Test Method
N_END⁽¹⁾	Endurance	100,000	cycles	JEDEC Standard A117
T_DR⁽¹⁾	Data Retention	20	years	JEDEC Standard A103
I_LTH⁽¹⁾	Latch Up	200	mA	JEDEC Standard 78

Note:

This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

Table 6-7. Write Timing Parameters
Symbol	Parameter	Minimum	Maximum	Units
T_SE	Sector Erase	—	300	ms
T_BE32KB	Block Erase (32 KB)	—	0.8	s
T_BE64KB	Block Erase (64 KB)	—	1	s
T_SCE	Chip Erase	—	200	s
T_PP	Page Program	—	2	ms
T_ESR	Erase Security Register 1/2/3 (typical 7 ms)	—	8.5	ms
T_PSR	Program Security Register 1/2/3 (typical 168 µs)	—	202	µs

DS20007183A

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