27.6.2 Memory Organization

Refer to the Physical Memory Map for memory sizes and addresses for each device.

The NVM is organized into rows, where each row contains four pages, as shown in the NVM Row Organization figure. One page is made of 64 bytes, that is sixteen 32-bit words, or height 64-bit double words. One row is made of 4 pages, that is 256 bytes, or sixty four 32-bit words, or sixteen 64-bit double words. The NVM has a row-erase granularity, while the write granularity is by page. In other words, a single row erase will erase all four pages in the row, while four write operations are used to write the complete row.

The NVM block contains a calibration and auxiliary space, a RWWEE section, and a main array that are memory mapped. Refer to the NVM Organization figure below for details.

The calibration and auxiliary space contains factory calibration and system configuration information. These spaces can be read from the AHB bus in the same way as the main NVM main address space.

In addition, a boot loader section can be allocated at the beginning of the main array, and an EEPROM Emulation section can be allocated at the end of the NVM main address space.

The lower rows in the NVM main address space can be allocated as a boot loader section by using the NVM User Row BOOTPROT fuses, and the upper rows can be allocated to EEPROM Emulation section by using the NVM User Row EEPROM Size fuses, as shown in the figure below.

The boot loader section is protected by the Lock bits corresponding to this address space and by the BOOTPROT[2:0] fuse. The EEPROM Emulation rows can be written regardless of the region lock status.

The number of rows protected by BOOTPROT is given in Boot Loader Size, the number of rows allocated to the EEPROM Emulation area are specified in EEPROM Size.