3.6 Electrical Characteristics - Memory Programming Specifications
A clarification has been made to change the Flash memory cell endurance specification in the Memory Programming Specifications table.
Table 37-8. Memory Programming Specifications
| Symbol | Description | Min. | Typ.✝ | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Data EEPROM Memory Specifications | ||||||
| ED* | Data EEPROM byte endurance | 100k | — | — | Erase/Write cycles | -40°C ≤ TA ≤ +85°C |
| tD_RET | Characteristic retention | — | 40 | — | Year | Provided no other violated specifications |
| VD_RW | VDD for Read or Erase/Write operation | VDDMIN | — | VDDMAX | V | |
| ND_REF* | Total Erase/Write cycles before refresh | 1M | 4M | — | Erase/Write cycles | -40°C ≤ TA ≤ +85°C |
| tD_CE | Byte/Multibyte/Full EEPROM Erase time | — | 10 | 10.5 | ms | |
| tD_WRE | Byte Write time | — | 70 | 75 | μs | |
| tD_BEW | Byte Erase and Write time | — | 10.07 | — | ms | |
| Program Flash Memory Specifications | ||||||
| EP* | Flash memory cell endurance | 1k | — | — | Erase/Write cycles | |
| tP_RET | Characteristic retention | — | 40 | — | Year | |
| VP_RD | VDD for Read operation | VDDMIN | — | VDDMAX | V | |
| VP_REW | VDD for Erase/Write operation | VDD(1) | — | VDDMAX | V | |
| tP_CE | Chip Erase time | — | 11 | 11.6 | ms | |
| tP_PE | Page Erase time | — | 10 | 10.5 | ms | |
| tP_WRD | Byte/Word Write time | — | 70 | 75 | μs | |
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✝ Data in the “Typ.” column is at TA = 25°C and VDD = 3.0V unless otherwise specified. These parameters are for design guidance only and are not tested. * These parameters are characterized but not tested in production. Note:
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