38.7 NVM Characteristics

Note that on this flash technology, a max number of four consecutive write is allowed per row. Once this number is reached, a row erase is mandatory.

Table 38-19. Flash Endurance and Data Retention
SymbolParameterConditionsMin.Typ.Max.Units
RetNVM25kRetention after up to 25kAverage ambient 55°C1050-Years
RetNVM2.5kRetention after up to 2.5kAverage ambient 55°C20100-Years
RetNVM100Retention after up to 100Average ambient 55°C25>100-Years
CycNVMCycling Endurance(1)-40°C < Ta < 105°C25k150k-Cycles
  1. An endurance cycle is a write and an erase operation.
Table 38-20. EEPROM Emulation(1), Endurance and Data Retention
SymbolParameterConditionsMin.Typ.Max.Units
RetEEPROM100kRetention after up to 100kAverage ambient 55°C1050-Years
RetEEPROM10kRetention after up to 10kAverage ambient 55°C20100-Years
CycEEPROMCycling Endurance(2)-40°C < Ta < 105°C100k600k-Cycles
  1. The EEPROM emulation is a software emulation described in the App note AT03265.
  2. An endurance cycle is a write and an erase operation.