34.11 NVM Characteristics

Table 34-29. Maximum Operating Frequency
VDD rangeNVM Wait StatesMaximum Operating FrequencyUnits
2.7V to 3.63V020MHz
132
Note: On this Flash technology, a maximum number of 8 consecutive write is allowed per row. Once this number is reached, a row erase is mandatory.
Table 34-30. Flash Endurance and Data Retention
SymbolParameterConditionsMin.Typ.Max.Units
RetNVM25kRetention after up to 25k cyclesAverage ambient 55°C1050-Years
RetNVM2.5kRetention after up to 2.5k cyclesAverage ambient 55°C20100-Years
RetNVM100Retention after up to 100 cyclesAverage ambient 55°C25>100-Years
CycNVMCycling Endurance(1)-40°C < Ta < 125°C25k--Cycles
Note:
  1. An endurance cycle is a write and an erase operation.
Table 34-31. EEPROM Emulation(1) Endurance and Data Retention
SymbolParameterConditionsMin.Typ.Max.Units
RetEEPROM100kRetention after up to 100k cyclesAverage ambient 55°C1050-Years
RetEEPROM10kRetention after up to 10k cyclesAverage ambient 55°C20100-Years
CycEEPROMCycling Endurance(2)-40°C < Ta < 125°C100k--Cycles
Note:
  1. The EEPROM Emulation is a software emulation as described in the Application Note “AT03265”.
  2. An endurance cycle is a write and an erase operation.
Table 34-32. NVM Characteristics
SymbolParameterConditionsMin.Typ.Max.Units
tFPPPage programming time---2.5ms
tFRERow erase time---6ms
tFCEDSU chip erase time (CHIP_ERASE)---240ms