Table 34-29. Maximum Operating
FrequencyVDD range | NVM Wait States | Maximum Operating Frequency | Units |
---|
2.7V to 3.63V | 0 | 20 | MHz |
1 | 32 |
Note: On this Flash technology, a maximum
number of 8 consecutive write is allowed per row. Once this number is reached, a row
erase is mandatory.
Table 34-30. Flash Endurance and Data
RetentionSymbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
---|
RetNVM25k | Retention after up to 25k cycles | Average ambient 55°C | 10 | 50 | - | Years |
RetNVM2.5k | Retention after up to 2.5k cycles | Average ambient 55°C | 20 | 100 | - | Years |
RetNVM100 | Retention after up to 100 cycles | Average ambient 55°C | 25 | >100 | - | Years |
CycNVM | Cycling Endurance(1) | -40°C < Ta <
125°C | 25k | - | - | Cycles |
Note:
- An endurance cycle is a write and an erase operation.
Table 34-31. EEPROM Emulation(1) Endurance and Data RetentionSymbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
---|
RetEEPROM100k | Retention after up to 100k cycles | Average ambient 55°C | 10 | 50 | - | Years |
RetEEPROM10k | Retention after up to 10k cycles | Average ambient 55°C | 20 | 100 | - | Years |
CycEEPROM | Cycling Endurance(2) | -40°C < Ta <
125°C | 100k | - | - | Cycles |
Note:
- The EEPROM Emulation is a
software emulation as described in the Application Note “AT03265”.
- An endurance cycle is a write and an erase operation.
Table 34-32. NVM CharacteristicsSymbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
---|
tFPP | Page programming time | - | - | - | 2.5 | ms |
tFRE | Row erase time | - | - | - | 6 | ms |
tFCE | DSU chip erase time (CHIP_ERASE) | - | - | - | 240 | ms |