Table 33-23. Maximum Operating Frequency
VDD range |
NVM Wait States |
Maximum Operating Frequency |
Units |
1.62V to 2.7V |
0 |
14 |
MHz |
1 |
28 |
2 |
32 |
2.7V to 3.63V |
0 |
20 |
1 |
32 |
Note: On this flash technology, a max number of 4 consecutive write is allowed per row. Once
this number is reached, a row erase is mandatory.
Table 33-24. Flash Endurance and Data Retention
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Units |
RetNVM25k |
Retention
after up to 25k cycles |
Average ambient 55°C |
10 |
50 |
- |
Years |
RetNVM2.5k |
Retention
after up to 2.5k cycles |
Average ambient 55°C |
20 |
100 |
- |
Years |
RetNVM100 |
Retention
after up to 100 cycles |
Average ambient 55°C |
25 |
>100 |
- |
Years |
CycNVM |
Cycling
Endurance(1) |
-40°C < Ta < 105°C |
25k |
150k |
- |
Cycles |
Note:
- An endurance cycle is a write and an erase operation.
Table 33-25. EEPROM Emulation(1) Endurance and Data Retention
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Units |
RetEEPROM100k |
Retention
after up to 100k cycles |
Average ambient 55°C |
10 |
50 |
- |
Years |
RetEEPROM10k |
Retention
after up to 10k cycles |
Average ambient 55°C |
20 |
100 |
- |
Years |
CycEEPROM |
Cycling
Endurance(2) |
-40°C < Ta < 105°C |
100k |
600k |
- |
Cycles |
Note:
- The EEPROM Emulation is a software
emulation described in the App note AT03265.
- An endurance cycle is a write and an erase operation.
Table 33-26. NVM Characteristics
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Units |
tFPP |
Page programming time |
- |
- |
- |
2.5 |
ms |
tFRE |
Row erase time |
- |
- |
- |
6 |
ms |
tFCE |
DSU chip erase time
(CHIP_ERASE) |
- |
- |
- |
240 |
ms |