33.8 NVM Characteristics

Table 33-23. Maximum Operating Frequency
VDD range NVM Wait States Maximum Operating Frequency Units
1.62V to 2.7V 0 14 MHz
1 28
2 32
2.7V to 3.63V 0 20
1 32
Note: On this flash technology, a max number of 4 consecutive write is allowed per row. Once this number is reached, a row erase is mandatory.
Table 33-24. Flash Endurance and Data Retention
Symbol Parameter Conditions Min. Typ. Max. Units
RetNVM25k Retention after up to 25k cycles Average ambient 55°C 10 50 - Years
RetNVM2.5k Retention after up to 2.5k cycles Average ambient 55°C 20 100 - Years
RetNVM100 Retention after up to 100 cycles Average ambient 55°C 25 >100 - Years
CycNVM Cycling Endurance(1) -40°C < Ta < 105°C 25k 150k - Cycles
Note:
  1. An endurance cycle is a write and an erase operation.
Table 33-25. EEPROM Emulation(1) Endurance and Data Retention
Symbol Parameter Conditions Min. Typ. Max. Units
RetEEPROM100k Retention after up to 100k cycles Average ambient 55°C 10 50 - Years
RetEEPROM10k Retention after up to 10k cycles Average ambient 55°C 20 100 - Years
CycEEPROM Cycling Endurance(2) -40°C < Ta < 105°C 100k 600k - Cycles
Note:
  1. The EEPROM Emulation is a software emulation described in the App note AT03265.
  2. An endurance cycle is a write and an erase operation.
Table 33-26. NVM Characteristics
Symbol Parameter Conditions Min. Typ. Max. Units
tFPP Page programming time - - - 2.5 ms
tFRE Row erase time - - - 6 ms
tFCE DSU chip erase time
(CHIP_ERASE) - - - 240 ms