45.3.5 Memory Programming Specifications
Standard Operating Conditions (unless otherwise stated) | |||||||
---|---|---|---|---|---|---|---|
Param No. | Sym. | Device Characteristics | Min. | Typ† | Max. | Units | Conditions |
Data EEPROM Memory Specifications | |||||||
MEM20 | ED | DataEE Byte Endurance | 100k | — | — | E/W | -40°C ≤ TA ≤ +85°C |
MEM21 | TD_RET | Characteristic Retention | — | 40 | — | Year | Provided no other specifications are violated |
MEM22 | ND_REF | Total Erase/Write Cycles before Refresh | 1M | 4M | — | E/W | -40°C ≤ TA ≤ +85°C |
MEM23 | VD_RW | VDD for Read or Erase/Write operation | VDDMIN | — | VDDMAX | V | |
MEM24 | TD_BEW | Byte Erase and Write Cycle Time | — | — | 11 | ms | |
Program Flash Memory Specifications | |||||||
MEM30 | EP | Flash Memory Cell Endurance | 10k | — | — | E/W | -40°C ≤
TA ≤ +85°C
(Note 1) |
MEM32 | TP_RET | Characteristic Retention | — | 40 | — | Year | Provided no other specifications are violated |
MEM33 | VP_RD | VDD for Read operation | VDDMIN | — | VDDMAX | V | |
MEM34 | VP_REW | VDD for Row Erase or Write operation | VDDMIN | — | VDDMAX | V | |
MEM35 | TP_REW | Self-Timed Page Write | — | — | 10 | ms | |
MEM36 | TSE | Self-Timed Page Erase | — | — | 11 | ms | |
MEM37 | TP_WRD | Self-Timed Word Write | — | — | 75 | μs | |
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. Note:
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