47.3.5 Memory Programming Specifications

Table 47-5. Memory Programming
Standard Operating Conditions (unless otherwise stated)
Param  No.	Sym.	Device Characteristics	Min.	Typ†	Max.	Units	Conditions
Data EEPROM Memory Specifications
MEM20	E_D	DataEE Byte Endurance	100k	—	—	E/W	-40°C ≤ T_A ≤ +85°C
MEM21	T_{D_RET}	Characteristic Retention	—	40	—	Year	Provided no other specifications are violated
MEM22	N_{D_REF}	Total Erase/Write Cycles before Refresh	1M	4M	—	E/W	-40°C ≤ T_A ≤ +85°C
MEM23	V_{D_RW}	V_DD for Read or Erase/Write operation	V_DDMIN	—	V_DDMAX	V
MEM24	T_{D_BEW}	Byte Erase and Write Cycle Time	—	—	11	ms
Program Flash Memory Specifications
MEM30	E_P	Flash Memory Cell Endurance	1k	—	—	E/W	-40°C ≤ T_A ≤ +85°C  (Note 1)
MEM32	T_{P_RET}	Characteristic Retention	—	40	—	Year	Provided no other specifications are violated
MEM33	V_{P_RD}	V_DD for Read operation	V_DDMIN	—	V_DDMAX	V
MEM34	V_{P_REW}	V_DD for Row Erase or Write operation	V_DDMIN	—	V_DDMAX	V
MEM35	T_{P_REW}	Self-Timed Page Write	—	—	10	ms
MEM36	T_SE	Self-Timed Page Erase	—	—	11	ms
MEM37	T_{P_WRD}	Self-Timed Word Write	—	—	75	μs
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. Note: Flash Memory Cell Endurance for the Flash memory is defined as: One Row Erase operation and one Self-Timed Write.