32.3.5 Memory Programming Specifications

Table 32-5.
Standard Operating Conditions (unless otherwise stated)
Param  No.	Sym.	Device Characteristics	Min.	Typ†	Max.	Units	Conditions
High Voltage Entry Programming Mode Specifications
MEM01	V_IHH	Voltage on MCLR/V_PP pin to enter programming mode	7.9	—	9	V	(Note 2)
MEM02	I_PPGM	Current on MCLR/V_PP pin during programming mode	—	1	—	mA	(Note 2)
Programming Mode Specifications
MEM10	V_BE	V_DD for Bulk Erase	—	2.7	—	V	(Note 3)
MEM11	I_DDPGM	Supply Current during Programming operation	—	—	10	mA
Program Flash Memory Specifications
MEM30	E_P	Flash Memory Cell Endurance	10k	—	—	E/W	-40°C ≤ T_A ≤ +85°C  (Note 1)
MEM32	T_{P_RET}	Characteristic Retention	—	40	—	Year	Provided no other specifications are violated
MEM33	V_{P_RD}	V_DD for Read operation	V_DDMIN	—	V_DDMAX	V
MEM34	V_{P_REW}	V_DD for Row Erase or Write operation	V_DDMIN	—	V_DDMAX	V
MEM35	T_{P_REW}	Self-Timed Row Erase or Self-Timed Write	—	3.0	—	ms
† - Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. Note: Flash Memory Cell Endurance for the Flash memory is defined as: One Row Erase operation and one Self-Timed Write. Required only if the LVP bit of the Configuration Words is disabled. Refer to the “Family Programming Specification” for more information.