38.4.5 Memory Programming Specifications

Table 38-8. Memory Programming Specifications
SymbolDescriptionMin.Typ.✝Max.UnitConditions
Data EEPROM Memory Specifications
ED*Data EEPROM byte endurance100k——Erase/Write cycles-40°C ≤ TA ≤ +85°C
tD_RETCharacteristic retention—40—Year
VD_RWVDD for Read or Erase/Write operationVDDMIN—VDDMAXV
ND_REF*Total Erase/Write cycles before refresh(2)1M4M—Erase/Write cycles-40°C ≤ TA ≤ +85°C
tD_CEByte/Multibyte/Full EEPROM Erase time—1011.7ms
tD_WREByte Write time—7075μs
tD_BEWByte Erase and Write time—10.07—ms
Program Flash Memory Specifications
EP*Flash memory cell endurance1k——Erase/Write cycles
tP_RETCharacteristic retention—40—Year
VP_RDVDD for Read operationVDDMIN—VDDMAXV
VP_REWVDD for Erase/Write operationVBOD(1)—VDDMAXV
tP_CEChip Erase time—1111.6ms
tP_PEPage Erase time—1011.7ms
tP_WRDByte/Word Write time—7075μs

✝ Data in the “Typ.” column is at TA = 25°C and VDD = 3.0V unless otherwise specified. These parameters are not tested and are for design guidance only.

* These parameters are characterized but not tested in production.

Note:
  1. During Chip Erase, the Brown-out Detector (BOD) configured with BODLEVEL0 is forced ON. The erase attempt will fail if the supply voltage VDD is below VBOD for BODLEVEL0.
  2. The number of times a separate location may be erased/written before a full refresh (erase/write) of the EEPROM array is required.