38.1 Absolute Maximum Ratings(†)
| Parameter | Rating | ||
|---|---|---|---|
| Ambient temperature under bias | -40°C to +125°C | ||
| Storage temperature | -65°C to +150°C | ||
| Voltage on pins with respect to VSS | |||
| -0.3V to +6.5V | ||
| -0.3V to +9.0V | ||
| -0.3V to (VDD + 0.3V) | ||
| Maximum current | |||
| -40°C ≤ TA ≤ +85°C | 350 mA | |
| 85°C < TA ≤ +125°C | 120 mA | ||
| -40°C ≤ TA ≤ +85°C | 250 mA | |
| 85°C < TA ≤ +125°C | 85 mA | ||
| ±50 mA | ||
| Clamp current, IK (VPIN < 0 or VPIN > VDD) | ±20 mA | ||
| Total power dissipation(2) | 800 mW | ||
Important:
- Maximum current rating requires even load distribution across I/O pins. Maximum current rating may be limited by the device package power dissipation characterizations, see the Thermal Characteristics table to calculate device specifications.
- Power dissipation is calculated as
follows:
PDIS = VDD x {IDD - Σ IOH} + Σ {(VDD - VOH) x IOH} + Σ (VOI x IOL)
- Internal Power Dissipation is calculated as follows: PINTERNAL = IDD x VDD, where IDD is the current to run the chip alone without driving any load on the output pins.
- I/O Power Dissipation is calculated as follows: PI/O = Σ(IOL*VOL)+Σ(IOH*(VDD-VOH))
- Derated Power is calculated as follows: PDER = PDMAX(TJ-TA)/θJA, where TA = Ambient Temperature, TJ = Junction Temperature.
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure above maximum rating conditions for extended periods may affect device reliability.