32.3.5 Memory Programming Specifications

Table 32-7. 
Standard Operating Conditions (unless otherwise stated)
Param
 No.Sym.Device CharacteristicsMin.Typ†Max.UnitsConditions
High Voltage Entry Programming Mode Specifications
MEM01VIHHVoltage on MCLR/VPP pin to enter Programming mode7.9—9V(Note 2)
MEM02IPPGMCurrent on MCLR/VPP pin during Programming mode—1—mA(Note 2)
Programming Mode Specifications
MEM10VBEVDD for Bulk Erase—2.7—V(Note 3)
MEM11IDDPGMSupply Current during Programming operation——10mA
Program Flash Memory Specifications
MEM30EPFlash Memory Cell Endurance10k——E/W-40°C ≤ TA ≤ +85°C


(Note 1)

MEM32TP_RETCharacteristic Retention—40—YearProvided no other specifications are violated
MEM33VP_RDVDD for Read operationVDDMIN—VDDMAXV
MEM34VP_REWVDD for Row Erase or Write operationVDDMIN—VDDMAXV
MEM35TP_REWSelf-Timed Row Erase or Self-Timed Write—3.0—ms

† - Data in ‘Typ’ column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.

Note:
  1. Flash Memory Cell Endurance for the Flash memory is defined as: One Row Erase operation and one Self-Timed Write.
  2. Required only if the LVP bit of the Configuration Words is disabled.
  3. Refer to the Family Programming Specification for more information.