37.12 NVM Characteristics

Table 37-42. Maximum Operating Frequency
VDD rangeNVM Wait StatesMaximum Operating FrequencyUnits
1.62V to 2.7V014MHz
128
242
348
2.7V to 3.63V024
148

Note that on this flash technology, a max number of 8 consecutive write is allowed per row. Once this number is reached, a row erase is mandatory.

Table 37-43. Flash Endurance and Data Retention
SymbolParameterConditionsMin.Typ.Max.Units
RetNVM25kRetention after up to 25kAverage ambient 55°C1050-Years
RetNVM2.5kRetention after up to 2.5kAverage ambient 55°C20100-Years
RetNVM100Retention after up to 100Average ambient 55°C25>100-Years
CycNVMCycling Endurance(1)-40°C < Ta < 85°C25k150k-Cycles

1. An endurance cycle is a write and an erase operation.

Table 37-44. EEPROM Emulation(1) Endurance and Data Retention
SymbolParameterConditionsMin.Typ.Max.Units
RetEEPROM100kRetention after up to 100kAverage ambient 55°C1050-Years
RetEEPROM10kRetention after up to 10kAverage ambient 55°C20100-Years
CycEEPROMCycling Endurance(2)-40°C < Ta < 85°C100k600k-Cycles

1. The EEPROM emulation is a software emulation described in the App note AT03265.

2. An endurance cycle is a write and an erase operation.

Table 37-45. NVM Characteristics (Device Variant A)
SymbolParameterConditionsMin.Typ.Max.Units
tFPPPage programming time---2.5ms
tFRERow erase time---6ms
tFCEDSU chip erase time (CHIP_ERASE)---240ms
Table 37-46. NVM Characteristics (Device Variant B,C, D and L)
SymbolParameterConditionsMin.Typ.Max.Units
tFPPPage programming time---2.5ms
tFRERow erase time--1.26ms
tFCEDSU chip erase time (CHIP_ERASE)---240ms