Table 41-33. Maximum Operating Frequency| VDD range | NVM Wait
States | Maximum
Operating Frequency | Unit |
|---|
| 2.7V to 3.63V | 0 | 24 | MHz |
| 1 | 48 | MHz |
Note that on this flash technology, a max number of 8 consecutive write is allowed per row. Once this number is reached, a row erase is mandatory.
Table 41-34. Flash Endurance and Data Retention| Parameter | Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|
| Retention after up to
25k | Average ambient
55°C | RetNVM25k | 10 | 50 | - | Years |
| Retention after up to
2.5k | Average ambient
55°C | RetNVM2.5k | 20 | 100 | - | Years |
| Retention after up to
100 | Average ambient
55°C | RetNVM100 | 25 | >100 | - | Years |
| Cycling
Endurance(1) | –40°C < Ta <
105°C | CycNVM | 25k | 150k | - | Cycles |
An endurance cycle is a write and an erase operation.
Table 41-35. EEPROM Emulation(1) Endurance and Data Retention| Parameter | Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|
| Retention after up to
100k | Average ambient
55°C | RetEEPROM100k | 10 | 50 | - | Years |
| Retention after up to
10k | Average ambient
55°C | RetEEPROM10k | 20 | 100 | - | Years |
| Cycling
Endurance(2) | –40°C < Ta
<
105°C | CycEEPROM | 100k | 600k | - | Cycles |
The EEPROM emulation is a software emulation described in the App note AT03265. An endurance cycle is a write and an erase operation.
Table 41-36. NVM Characteristics| Parameter | Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|
| Page programming
time | - | tFPP | - | - | 2.5 | ms |
| Row erase time | - | tFRE | - | - | 6 | ms |
| DSU chip erase time
(CHIP_ERASE) | - | tFCE | - | - | 240 | ms |
