33.8 NVM Characteristics

Table 33-23. Maximum Operating Frequency
V_DD range	NVM Wait States	Maximum Operating Frequency	Units
1.62V to 2.7V	0	14	MHz
	1	28
	2	32
2.7V to 3.63V	0	20
2.7V to 3.63V	1	32

Note: On this flash technology, a max number of 4 consecutive write is allowed per row. Once this number is reached, a row erase is mandatory.

Table 33-24. Flash Endurance and Data Retention
Symbol	Parameter	Conditions		Min.	Typ.	Max.	Units
Ret_NVM25k	Retention after up to 25k cycles	Average ambient 55°C		10	50	-	Years
Ret_NVM2.5k	Retention after up to 2.5k cycles	Average ambient 55°C		20	100	-	Years
Ret_NVM100	Retention after up to 100 cycles	Average ambient 55°C		25	>100	-	Years
Cyc_NVM	Cycling Endurance⁽¹⁾	-40°C < Ta < 105°C		25k	150k	-	Cycles

Note:

An endurance cycle is a write and an erase operation.

Table 33-25. EEPROM Emulation⁽¹⁾ Endurance and Data Retention
Symbol	Parameter	Conditions		Min.	Typ.	Max.	Units
Ret_EEPROM100k	Retention after up to 100k cycles	Average ambient 55°C		10	50	-	Years
Ret_EEPROM10k	Retention after up to 10k cycles	Average ambient 55°C		20	100	-	Years
Cyc_EEPROM	Cycling Endurance⁽²⁾	-40°C < Ta < 105°C		100k	600k	-	Cycles

Note:

The EEPROM Emulation is a software emulation described in the App note AT03265.
An endurance cycle is a write and an erase operation.

Table 33-26. NVM Characteristics
Symbol	Parameter	Conditions	Min.	Typ.	Max.	Units
t_FPP	Page programming time	-	-	-	2.5	ms
t_FRE	Row erase time	-	-	-	6	ms
t_FCE	DSU chip erase time (CHIP_ERASE)	-	-	-	240	ms

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